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Interface properties of Si3N4/Si/n-GaAs metal-insulator-semiconductor structures grown on GaAs(111)B substrate

Published online by Cambridge University Press:  03 September 2012

D.G. Park ,
D. M. Diatezua ,
Z. Chen ,
S. N. Mohammad  and
H. Morkoç
D.G. Park
Affiliation:
University of Illinois at Urbana-Champaign, Materials Research Laboratory and Coordinated Science Laboratory, 104 South Goodwin Avenue, Urbana, Illinois 61801
D. M. Diatezua
Affiliation:
University of Illinois at Urbana-Champaign, Materials Research Laboratory and Coordinated Science Laboratory, 104 South Goodwin Avenue, Urbana, Illinois 61801
Z. Chen
Affiliation:
University of Illinois at Urbana-Champaign, Materials Research Laboratory and Coordinated Science Laboratory, 104 South Goodwin Avenue, Urbana, Illinois 61801
S. N. Mohammad
Affiliation:
University of Illinois at Urbana-Champaign, Materials Research Laboratory and Coordinated Science Laboratory, 104 South Goodwin Avenue, Urbana, Illinois 61801
H. Morkoç
Affiliation:
Also with Wright Laboratory, Wright Patterson Air Force Base
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Abstract

We present characteristics of Al/Si3N4/Si/n-GaAs metal-insulator-semiconductor (MIS) interfaces grown on GaAs(111)B prepared with a combination of in situ molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) techniques . The density of the surface states in the high 1010 eV-1 cm-2 near the GaAs midgap for the GaAs grown at 575°C and 625°C was obtained. The MIS structure with GaAs homoepitaxial layer grown at 625°C, showing smoother surface morphology than the surface grown at 575 °C, exhibited small hysteresis which was as small as 30 mV under a field excursion of 1.5 MV/cm. The presence of a 1 MHz frequency response at 77 K suggests that the traps be within 60 meV of the conduction band edge of GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 327
Copyright
Copyright © Materials Research Society 1997

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