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Interface Properties of II-VI/III-V Heterostructures

Published online by Cambridge University Press:  25 February 2011

R.L. Gunshor ,
M. Kobayashi  and
N. Otsuka
R.L. Gunshor
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
M. Kobayashi
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
N. Otsuka
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907
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Abstract

In situ x-ray photoelectron spectroscopy (XPS) is used to study the nature of the bonding at CdTe/InSb and ZnSe/GaAs interfaces grown by molecular beam epitaxy. A comparison of the In3d core level features from the InSb epilayer surface, a Tereacted InSb surface, very thin (a few monolayers) CdTe/InSb epilayer/epilayer heterostructures and from separately grown (In,Te) epilayers, indicate similar In bonding characteristics for the Te-reacted layer, the CdTe/InSb heterostructures and the (In,Te) epilayers. A parallel XPS study of ZnSe/GaAs interfaces leads to the conclusion that there is a general tendency for the formation of a III-VI interfacial compound when forming IIVI/ III-V junctions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 303
Copyright
Copyright © Materials Research Society 1991

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References

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