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Interface Governed Magnetostriction in Ultra Thin CoFe and Fe Films

Published online by Cambridge University Press:  10 February 2011

R. Mattheis
Affiliation:
Institute for Physical High Technology, PO BOX 100 239, Winzerlaer Str. 10, D- 07745 Jena, Germany
J. Langer
Affiliation:
Institute for Physical High Technology, PO BOX 100 239, Winzerlaer Str. 10, D- 07745 Jena, Germany
S. Senz
Affiliation:
Max-Planck-Institute for Microstructural Physics, Weinberg 2, D-06120 Halle/Saale, Germany
H. A. M van den Berg
Affiliation:
Siemens Corporate Technology, ZT MF 1, P.O.Box 3220, D-91050 Erlangen, Germany
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Abstract

Two different types of polycrystalline films, films with low (Fe) and films with high (Co50Fe50) saturation magnetostriction λs, were sandwiched between Cu to study the thickness dependence of λs in Cu/X/Cu systems. We utilised a new method (ROTMOKE) for a high accurate Hk determination. The values for X, were determined by analysing the change of Hk during application of compressive and tensile stress by cylindrical bending of the substrate joint with the film. For both systems, a remarkable contribution of the interface to the λs, was found. The sign of the interface contribution is opposed to the sign of bulk λs, leading to a zero transition of λs., For Fe this transition occurs at a thickness of 5 nm whereas for the CoFe film with a strong λs, value of the bulk of around 80 · 10−6 a transition was extrapolated at a thickness around 1 nm.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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