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Interface Defects and Rectification Properties of Heterojunctions Between Solid C60 and GaAs

Published online by Cambridge University Press:  10 February 2011

K.M. Chen ,
Y.X. Zhang ,
S.X. Jin ,
K. Wu  and
H.F. Liu
K.M. Chen
Affiliation:
Department of Physics, Peking University, Beijing 100871, China
Y.X. Zhang
Affiliation:
Department of Physics, Peking University, Beijing 100871, China
S.X. Jin
Affiliation:
Department of Physics, Peking University, Beijing 100871, China
K. Wu
Affiliation:
Department of Physics, Peking University, Beijing 100871, China
H.F. Liu
Affiliation:
Beijing Institute of Nonferrous Metals, Beijing 100088, China
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Abstract

Solid C60/GaAs contacts were fabricated by growing solid C60 films on both n-type and p-type GaAs(100) substrates through vacuum deposition. The electronic states at C60/GaAs interfaces were studied. Both C60/n-GaAs and C60/p-GaAs contacts were found to be strong rectification junctions with a rectifying ratio higher than 106 at a bias of ± 1.OV. Two distinct traps were also observed at the C60/GaAs interfaces with deep level transient spectroscopy (DLTS); one is the electron trap at 0.35 eV below the GaAs conduction band and the other is a hole trap at 0.45 eV above the GaAs valence band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 499
Copyright
Copyright © Materials Research Society 1998

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