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Interface Conduction between Conductive ReO3 Thin Film and NdBa2Cu3O6 Thin Film

Published online by Cambridge University Press:  11 February 2011

Manabu Ohkubo
Affiliation:
Department of Electronics & Computer Science, College of Science & Technology, Nihon University, 7–24–1 Narashinodai, Funabashi-shi, Chiba 274–8501, Japan
Kumiko Fukai
Affiliation:
Department of Electronics & Computer Science, College of Science & Technology, Nihon University, 7–24–1 Narashinodai, Funabashi-shi, Chiba 274–8501, Japan
Kohji Matsuo
Affiliation:
Department of Electronics & Computer Science, College of Science & Technology, Nihon University, 7–24–1 Narashinodai, Funabashi-shi, Chiba 274–8501, Japan
Nobuyuki Iwata
Affiliation:
Department of Electronics & Computer Science, College of Science & Technology, Nihon University, 7–24–1 Narashinodai, Funabashi-shi, Chiba 274–8501, Japan
Hiroshi Yamamoto
Affiliation:
Department of Electronics & Computer Science, College of Science & Technology, Nihon University, 7–24–1 Narashinodai, Funabashi-shi, Chiba 274–8501, Japan
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Abstract

The Re oxide films were deposited on quartz glasses by RF reactive sputtering from a Re metal target. The lowest resistivity was observed in the film in-situ annealed at 200°C in Ar atmosphere and showed the order of 10-4 Ω cm of which the value was still about 10 times as large as that of a single crystal ReO3. The temperature dependence of the resistivity revealed a metallic behavior. A superconductivity did not take place in the bilayered film of ReO3 / NdBa2Cu3O6. In the interface region the resistivity minimum probably caused by the Kondo effect was observed in the neighborhood of 120K.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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