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The interdiffusion of Cu, Co and Au Thin Films at elevated temperatures

Published online by Cambridge University Press:  21 February 2011

Peter Madakson
Affiliation:
IBM Research Division T. J. Watson Research Center Yorktown Heights, New York 10598
Joyce C. Liu
Affiliation:
IBM Research Division T. J. Watson Research Center Yorktown Heights, New York 10598
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Abstract

A detailed study of the interdiffusion and resistivity of Cu/Au, Cu/Co/ Co/Au and Cu/Co/Au thin film structures was carried out at temperatures ranging from 25 to 550°C1. Both Cu and Au, in the Cu/Au structure, intermix readily even at temperatures as low as 150°C and the interdiffusion is accompanied by rapid increase in resistivity. Very little interdiffusion occurs in the Cu/Co, Co/Au or Cu/Co/Au thin film structures up to about 400°C, after which the resistivity increases. The very rapid increase in resistivity observed at 250°C for the Cu/Au system and at 450°C for Cu/Co/Au, is associated with recrystallization of the films into large grains and the formation of AuCu, Cu3Au and Cu3Au2 compounds. The Cu/Co/Au structure recrystallizes at a higher temperature because of the time needed for Cu and Au to diffuse through the Co layer, which did not react significantly with either Au or Cu.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

1. Madakson, P. and Liu, J.C., J. Appl. Phys., to be published.Google Scholar
2. Minitz, A. and Komem, Y., Thin Solid Films 112, 139(1984)Google Scholar
3. Grovenor, C.R.M., Acta metall. 33, 579(1985).Google Scholar