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Interdiffusion Mechanisms in GaAs/AlGaAs Quantum Well Heterostructures Induced by SiO2 Capping and Annealing

Published online by Cambridge University Press:  10 February 2011

A. Pépin ,
C. Vieu ,
M. Schneider ,
H. Launois  and
E. V. K. Rao
A. Pépin
Affiliation:
Laboratoire de Microstructures et de Microélectronique (L2M/CNRS), 196 ave. Henri-Ravéra, 92225 Bagneux, FRANCE, [email protected]
C. Vieu
Affiliation:
Laboratoire de Microstructures et de Microélectronique (L2M/CNRS), 196 ave. Henri-Ravéra, 92225 Bagneux, FRANCE, [email protected]
M. Schneider
Affiliation:
Laboratoire de Microstructures et de Microélectronique (L2M/CNRS), 196 ave. Henri-Ravéra, 92225 Bagneux, FRANCE, [email protected]
H. Launois
Affiliation:
Laboratoire de Microstructures et de Microélectronique (L2M/CNRS), 196 ave. Henri-Ravéra, 92225 Bagneux, FRANCE, [email protected]
E. V. K. Rao
Affiliation:
Centre National d'Etudes des Télécommunications (CNET-Bagneux), 196 ave. Henri-Ravéra, 92225 Bagneux, FRANCE
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Abstract

We have investigated intermixing enhancement in GaAs/AlGaAs quantum well heterostructures achieved by SiO2 capping obtained by rapid thermal chemical vapor deposition. Evidence of fast Ga pumping inside the SiO2 layer during anneal and simultaneous generation of excess Ga vacancies under the SiO2/GaAs interface is presented. A simple model involving the thermal stress arising from the difference in thermal expansion coefficients between SiO2 and GaAs, is proposed to account for the abnormally fast Ga vacancy diffusion inside the heterostructure. A spatial control of the interdiffused areas can be achieved if a suitable stress field is imposed on the semiconductor surface by the capping layers. We show experimental evidence of this effect using a specific patterning of SiO2/Si3N4 bilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 447
Copyright
Copyright © Materials Research Society 1998

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References

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