Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-07T19:18:28.650Z Has data issue: false hasContentIssue false
  • English
  • Français

Interdiffusion and Grain-Boundary Migration in Au/Cu Bilayers During Ion-Irradiation

Published online by Cambridge University Press:  28 February 2011

Dale E. Alexander ,
L. E. Rehn  and
Peter M. Baldo
Dale E. Alexander
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
L. E. Rehn
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
Peter M. Baldo
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
Get access

Abstract

Ion irradiation and annealing experiments have been conducted on Au/Cu bilayer films to evaluate the effect of irradiation on diffusion-induced grain boundary migration (DIGM). The Au films were prepared with a large-grained microstructure with grain boundaries perpendicular to the film surface and extending through the film thickness. Irradiations were conducted with 1.5 MeV Kr at 228°C. Rutherford backscattering spectrometry of the samples revealed that interdiffusion was substantially enhanced in the irradiated area relative to the unirradiated area. Both irradiated and annealed-only areas were characterized by a nearly uniform composition of 14 at.% and 7 at.% Cu respectively through the entire thickness of the underlying Au film. Small probe X-ray energy dispersive spectroscopy showed significant lateral compositional homogeneities in both irradiated and annealed areas. These two results are consistent with previous observations of DIGM in the Au/Cu system, suggesting that this previously unexamined interdiffusion mechanism contributes to ion beam mixing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 559
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Rehn, L.E. and Okamoto, P.R., Nucl. Instrum. Methods B 39, 104 (1989).Google Scholar
[2] Akano, U.G., Thompson, D.A., Smeltzer, W.W. and Davies, J.A., J. of Mater. Res. 3, 1063 (1988).Google Scholar
[3] King, A.H., Inter. Mater. Rev. 32, 173 (1987).CrossRefGoogle Scholar
[4] Pan, J.D. and Balluffi, R.W., Acta Metall. 30, 861 (1982).Google Scholar
[5] Grovenor, C. R. M., Acta Metall. 33, 579 (1985).Google Scholar
[6] Hung, L.S., Nastasi, M. and Mayer, J.W., J. Appl. Phys. 56, 1420 (1984).Google Scholar
[7] Wang, Z.L., Westendorp, J.F.M., Doom, S. and Saris, F.W. in Metastable Materials Formation by Ion Implantation edited by Picraux, S.T. and Choyke, W.J. (Mater. Res. Soc. Proc. 7, 1982) p. 59.Google Scholar
[8] Doolittle, L.R., Nucl. Instrum. Methods B 9, 334 (1985).Google Scholar
[9] Borders, J.A., Thin Solid Films 19, 359 (1973).Google Scholar
[10] Balluffi, R.W. and Cahn, J.W., Acta Metall. 29, 493 (1981).Google Scholar