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Interaction of Thin Ga Overlayer with InP(110): a Photoemission Study

Published online by Cambridge University Press:  21 February 2011

R. Cao ,
K. Miyano ,
T. Kendelewicz ,
I. Lindau  and
W. E. Spicer
R. Cao
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305
K. Miyano
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305
T. Kendelewicz
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305
I. Lindau
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305
W. E. Spicer
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305
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Abstract

Photoemission study of the Ga/InP(110) interface, in particular at the In 4d cooper minimum (CM) reveals that the growth of the deposited Ga on InP(110) at room temperature (RT) has two modes: chemisorption at low coverage and metallic island formation at high coverage, whereas the Ga overlayer is much more uniform at 80K low temperature (LT). A replacement reaction between Ga and InP is found to take place only underneath the Ga islands. Metal screening from the Ga islands is suggested to weaken the substrate bonds and enhance the replacement reaction. Distinct behavior of Fermi level pinning has been observed at different temperatures. This is correlated with the temperature dependence of the overlayer morphology as well as the interfacial reaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 143: Symposium V – Synchrotron Radiation in Materials Research , 1988 , 103
Copyright
Copyright © Materials Research Society 1989

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