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Interaction of O and H Atoms with low-k SiOCH films pretreated in He plasma

Published online by Cambridge University Press:  31 January 2011

O. V. Braginsky ,
A. S. Kovalev ,
D. V. Lopaev ,
Y. M. Mankelevich ,
E. M. Malykhin ,
O. V. Proshina ,
T. V. Rakhimova ,
A. T. Rakhimov ,
A. N. Vasilieva  and
D. G. Voloshin
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O. V. Braginsky
Affiliation:
[email protected], Skobeltsyn Institute of Nuclear Physics, MSU, Moscow, Russian Federation
A. S. Kovalev
Affiliation:
[email protected], Skobeltsyn Institute of Nuclear Physics, MSU, Moscow, Russian Federation
D. V. Lopaev
Affiliation:
[email protected], Skobeltsyn Institute of Nuclear Physics, MSU, Moscow, Russian Federation
Y. M. Mankelevich
Affiliation:
[email protected], MSU, Moscow, Russian Federation
E. M. Malykhin
Affiliation:
[email protected], MSU, Moscow, Russian Federation
O. V. Proshina
Affiliation:
[email protected], MSU, Moscow, Russian Federation
T. V. Rakhimova
Affiliation:
[email protected], Skobeltsyn Institute of Nuclear Physics, MSU, Moscow, Russian Federation
A. T. Rakhimov
Affiliation:
[email protected], MSU, Moscow, Russian Federation
A. N. Vasilieva
Affiliation:
[email protected], Skobeltsyn Institute of Nuclear Physics, MSU, Moscow, Russian Federation
D. G. Voloshin
Affiliation:
[email protected], Skobeltsyn Institute of Nuclear Physics, MSU, Moscow, Russian Federation
S. M. Zyryanov
Affiliation:
[email protected], Skobeltsyn Institute of Nuclear Physics, MSU, Moscow, Russian Federation
Mikhail R. Baklanov
Affiliation:
[email protected], IMEC, Kapeldreef 75, Leuven, 3001, Belgium, +3216281606, +32 16 281 214
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Abstract

The effect of He plasma pretreatment on interaction of O and H atoms with SiCOH low-k materials is studied using a special experimental system designed for this purpose. The experimental system allowed separate study of the effects of He plasma, VUV light and He 21S0 metastable atoms. It is shown that the carbon depletion by oxygen atoms can be significantly reduced by He plasma pretreatment. Considerable increase of CH and CH2-CH2 groups in the surface area of low-k films is observed when the films were exposed to VUV light and metastable atoms generated by He plasma. FTIR and ellipsometry showed formation of densified surface layer. This carbon rich densified surface layer decreases damage of low-k film when it is exposed in O2 plasma. The impact of H atoms on low-K surface noticeably differs from O atoms effect. The H atoms saturate all unbounded remaining carbon bonds thereby promoting improvement of SiOCH structure.

Keywords

dielectric propertiesdiffusionporosity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1156: Symposium D – Materials, Processes and Reliability for Advanced Interconnects for Micro-and Nanoelectronics–2009 , 2009 , 1156-D01-06
Copyright
Copyright © Materials Research Society 2009

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References

1 Baklanov, M. R. et al. Proc. of Int. Conf. Sol.-St. Integr. Circuit Techn. (ICSICT), p. 291, Shanghai, 2006.Google Scholar
2 Rakhimova, T. V. et al. IEEE Trans. on Plasma Sci., Special Issue, TPS, 2009.Google Scholar
3 Urbanowicz, A. M. et al., Electrochem. Sol. St. Lett., 10, G76 (2007).Google Scholar
4 Lazzetti, P. et al. Thin Solid Films, 516, 3697 (2008).Google Scholar
5 Urbanowicz, A. M. et al. Electrochem. Sol. St. Lett., 12, H292 (2009).Google Scholar
6 Marsik, P. et al. Proc. of Advanced Metallization Conference in 2008, MRS, 2009.Google Scholar
7 Marsik, P. et al. Proc. of Advanced Metallization Conference in 2008, MRS, 2009.Google Scholar