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The interaction of C60 with Si(111) and Co/Si(111)

Published online by Cambridge University Press:  15 March 2011

M.A.K. Zilani ,
H. Xu ,
X.S. Wang  and
A.T.S. Wee
M.A.K. Zilani
Affiliation:
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542
H. Xu
Affiliation:
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542
X.S. Wang
Affiliation:
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542
A.T.S. Wee
Affiliation:
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542
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Abstract

We have studied the interaction of C60 with clean Si(111) and sub-monolayer Co covered Si(111) using scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Our STM results indicate that C60 has little mobility at room temperature (RT) on Co/Si(111). After annealing to 450 °C, STM images show a regular arrangement of partially decomposed C60. XPS reveals a partial decomposition of C60 on Co/Si(111) at 520 °C, and total decomposition to form a SiC-3×3 phase at 720 °C. These results show that Co catalyses C60 decomposition resulting in the formation of the ordered SiC-3×3 phase ∼200 °C below that on clean Si(111).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J5.6
Copyright
Copyright © Materials Research Society 2004

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