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Intelligent Processing of Materials for Plasma Deposition

Published online by Cambridge University Press:  21 February 2011

H.P. Wang ,
E.M. Perry  and
R.D. Lillquist
H.P. Wang
Affiliation:
Process Technology Program, GE Corporate Research and Development, Schenectady, NY 12301
E.M. Perry
Affiliation:
Process Technology Program, GE Corporate Research and Development, Schenectady, NY 12301
R.D. Lillquist
Affiliation:
Process Technology Program, GE Corporate Research and Development, Schenectady, NY 12301
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Abstract

Induction coupled plasma deposition (ICPD) is currently being explored to produce metal matrix composite (MMC) materials in the aircraft engine/aerospace industry. This paper addresses the development and integration of process knowledge, process simulation, process sensors and control strategy, as part of the intelligent processing of materials (IPM) initiative for the orderly transfer of processing knowledge from laboratory to production. The driving force for IPM is the stringent quality constraints on the ICPD process. In order to meet these constraints, an intelligent process control strategy had to be developed, which involves two key elements – a process simulator and process sensors. The objectives of the process simulator were to establish control strategy algorithms through sensitivity studies on the process parameters, to provide a computer-aided tool to reduce the process development cycle time, and to provide further understanding of and improvement in the ICPD manufacturing process. The objectives of the process sensors were to provide experimental data for on-line process control, as well as validation of the process simulator.

During the course of this work, we have developed an innovative, fast-acting process simulator, which maintains fidelity to the process physics and retains all of the control variables, yet operates in a responsive, interactive manner. We have defined and demonstrated a process sensor system for measuring the deposit surface temperature, and identified several plasma transmission window regions for the ICPD process. We have developed a preliminary control strategy for the intelligent processing of MMC monotapes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 190: Symposium M – Plasma Processing and Synthesis of Materials III , 1990 , 3
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Pfender, E., “Heat and Momentum Transfer to Particles in Thermal Plasma Flows,” Pure and Applied Chemistry 57, 1179–1195, (1985).Google Scholar
[2] Boulos, M., “The Inductively Coupled R.F. (Radio Frequency) Plasma,” Pure and Applied Chemistry 57, 1321–1352, (1985).Google Scholar
[3] Proulx, P., Mostaghimi, J., and Boulos, M., “Plasma-Particle Interaction Effects in Induction Plasma Modeling under Dense Loading Conditions,” Int J. Heat Mass Transfer 28, 1327–1336, (1985).Google Scholar
[4] Wei, D., Farouk, B., and Apelian, D., “Melting Metal Powder Particles in an Inductively Coupled R. F. Plasma Torch,” Metallugical Transactions 19B, 213–226, (1988).Google Scholar
[5] Glowinski, R., Golub, G., Meurant, G., and Periaux, J., editors, “Domain Decomposition Methods for Partial Differential Equations,” Soc. for nd and Appl. Math., (1988).Google Scholar
[6] Savkar, S.D., and Dakin, J.T., “Calculation of RF Plasma Gas Mixture Properties,” GECRD Report (in progress).Google Scholar
[7] Savkar, S.D., and Miller, R.S., “RF Plasma Torch Temperature Field Measurements Using Thermocouples,” Int Syrup. on Plasma Chemr, ISPC-9, Vol.1, 377–382 (1989).Google Scholar
[8] Wang, H.P., and Perry, E.M., “A Fast-Acting Process Simulator for Intelligent Plasma Deposition,” tobe presented at the AIAA/ASME Thermophysics and Heat Transfer Conference, Seattle, WA, (June 1990).Google Scholar
[9] Backman, D., Russell, E., Wei, D., and Pang, Y., “Intelligent Processing for Metal Matrix Composites, ”AIME Conference Symposia, Indianapolis, IN, (1989).Google Scholar
[10] Lillquist, R.D., and Penney, C.M., “Arc-Welding Seam-Tracking Applications Employing Passive Infrared Sensors,” U.S. Patent 4,477,712, (16 Oct, 1984).Google Scholar
[11] Lillquist, R.D., “Infrared Sensor for Arc-Welding,” U.S. Patent 4,484,059, (20 Nov., 1984).Google Scholar
[12] Lillquist, R.D., “Imaging Pyrometer,” U.S. Patent 4,687,344, (18 Aug., 1987), and Certificate of Correction, (26 Apr., 1988).Google Scholar
[13] Lillquist, R.D., Lober, R., and Menzies, R.G., “Infrared Sensor for the Control of Plasma Jet Spray Coating Processes and Electric Arc Heating Processes,” U.S. Patent 4,656,331, (7Apr., 1987).Google Scholar
[14] Harris, L P., GE-CRD (private communication).Google Scholar