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Integration Studies of Plasma Deposited Fluorinated Amorphous Carbon

Published online by Cambridge University Press:  10 February 2011

Thomas W. Mountsier ,
John A. Samuels  and
Richard S. Swope
Thomas W. Mountsier
Affiliation:
Novellus Systems, Inc., 3970 N. First Street, MIS 252, San Jose, CA 95134
John A. Samuels
Affiliation:
Novellus Systems, Inc., 3970 N. First Street, MIS 252, San Jose, CA 95134
Richard S. Swope
Affiliation:
Novellus Systems, Inc., 3970 N. First Street, MIS 252, San Jose, CA 95134
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Abstract

Recently, we reported the deposition of fluorinated amorphous carbon (FlAC) from hexafluorobenzene (C6F6) under parallel plate (PP) and inductively coupled plasma (ICP-HDP) conditions. Based on initial materials testing, these two platforms generated comparable materials with low dielectric constants (2.4 – 2.8), low weight loss/shrinkage (< 1.5 %/hr. at 425° C), hardness (2–3 Gpa) and adhesion (4–9 kpsi). Here we attempt to answer a basic integration question: FIAC compatibility with other materials used in the interconnect scheme. Investigations of adhesion of F1AC to, and capped by, silicon oxide, silicon nitride and various metals shows generally greater stability of the ICP generated material vs. PP-FIAC. Failures appeared to occur primarily at the FIAC/film interface at 400 and 300 °C for ICP and PP respectively. Although thickness-loss and weight-loss measurements indicate good thermal stability, TDS spectra show low-level outgassing of fluorine-based molecules and fragments even in samples annealed for 4 hours at 400 °C, resulting in interface failures. Plasma treatments and anneals of the F1AC were found to have a minimal effect but liner/cap composition and processing has a strong influence on the adhesion of other films to the fluorocarbon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998 , 259
Copyright
Copyright © Materials Research Society 1998

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References

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