Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T17:59:59.906Z Has data issue: false hasContentIssue false
  • English
  • Français

Integration of PLZT and BST Family Oxides with GaN.

Published online by Cambridge University Press:  03 September 2012

Andrei V. Osinsky ,
Vladimir N. Fuflyigin ,
Feiling Wang ,
Peter I. Vakhutinsky  and
Peter E. Norris
Andrei V. Osinsky
Affiliation:
NZ Applied Technologies, 14A Gill St., Woburn, MA 01801, USA
Vladimir N. Fuflyigin
Affiliation:
NZ Applied Technologies, 14A Gill St., Woburn, MA 01801, USA
Feiling Wang
Affiliation:
NZ Applied Technologies, 14A Gill St., Woburn, MA 01801, USA
Peter I. Vakhutinsky
Affiliation:
NZ Applied Technologies, 14A Gill St., Woburn, MA 01801, USA
Peter E. Norris
Affiliation:
NZ Applied Technologies, 14A Gill St., Woburn, MA 01801, USA
Get access

Abstract

Recent advances in the processing of complex-oxide materials has allowed us to monolithically grow ferroelectrics of lead lanthanum zirconate titanate (PLZT) and barium strontium titanate (BST) systems on a GaN/sapphire structure. High quality films of PLZT and BST were grown on GaN/c-Al2O3 in a thickness range of 0.3-5 [.proportional]m by a solgel technique. Field-induced birefringence, as large as 0.02, was measured from a PLZT layer grown on a buffered GaN/sapphire structure. UV illumination was found to result in more symmetrical electrooptic hysteresis loop. BST films on GaN demonstrated a low frequency dielectric constant of up to 800 with leakage current density as low as 5.5.10−8 A/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.12
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Davydov, A., Anderson, T.J., in III-V Nitride Materials and Processes, edited by Moustakas, T.D., Proc. volume 98–18 (Boston, MA, 1998), in pressGoogle Scholar
2. Fuflyigin, V., Li, K.K., Wang, F., Jiang, H., Liu, S., Zhao, J., Norris, P., Yip, P., in High-Temperature Superconductors and Novel Inorganic Materials, edited by Tendeloo, G. Van, (Kluwer Academic.Publ. 1999), p.279–284 Google Scholar
3. Fuflyigin, V., Osinsky, A., Wang, F. to be published in Applied Physics Letters.Google Scholar
4. Wang, F., Furman, E., Haertling, G.H., J.Appl.Phys. 78, 9 (1995)Google Scholar