Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-26T19:46:56.821Z Has data issue: false hasContentIssue false
  • English
  • Français

Integration of GaAs on Ge/Si towers by MOVPE

Published online by Cambridge University Press:  02 July 2013

A. G. Taboada ,
T. Kreiliger ,
C. V. Falub ,
M. Richter ,
F. Isa ,
E. Müller ,
E. Uccelli ,
P. Niedermann ,
A. Neels  and
G. Isella
...Show all authors
A. G. Taboada
Affiliation:
Laboratory for Solid State Physics, ETH Zürich, Schafmattstr. 16 CH-8093 Zürich, Switzerland
T. Kreiliger
Affiliation:
Laboratory for Solid State Physics, ETH Zürich, Schafmattstr. 16 CH-8093 Zürich, Switzerland
C. V. Falub
Affiliation:
Laboratory for Solid State Physics, ETH Zürich, Schafmattstr. 16 CH-8093 Zürich, Switzerland
M. Richter
Affiliation:
IBM Research GmbH, Zurich Research Laboratory, Säumerstrasse 4, CH-8803, Rüschlikon, Switzerland
F. Isa
Affiliation:
L-NESS and Dipartamento di Fisica-Politecnico di Milano,Via Anzani 42, I-22100 Como, Italy
E. Müller
Affiliation:
Electron Microscopy ETH Zürich (EMEZ), Wolfgang-Pauli-Str. 16, CH-8093 Zürich, Switzerland
E. Uccelli
Affiliation:
IBM Research GmbH, Zurich Research Laboratory, Säumerstrasse 4, CH-8803, Rüschlikon, Switzerland
P. Niedermann
Affiliation:
Microsystems Technology, CSEM, Jaquet Droz 1, CH-2002 Neuchâtel, Switzerland
A. Neels
Affiliation:
Microsystems Technology, CSEM, Jaquet Droz 1, CH-2002 Neuchâtel, Switzerland
G. Isella
Affiliation:
L-NESS and Dipartamento di Fisica-Politecnico di Milano,Via Anzani 42, I-22100 Como, Italy
J. Fompeyrine
Affiliation:
IBM Research GmbH, Zurich Research Laboratory, Säumerstrasse 4, CH-8803, Rüschlikon, Switzerland
A. Dommann
Affiliation:
Microsystems Technology, CSEM, Jaquet Droz 1, CH-2002 Neuchâtel, Switzerland
H. von Känel
Affiliation:
Laboratory for Solid State Physics, ETH Zürich, Schafmattstr. 16 CH-8093 Zürich, Switzerland
Get access

Abstract

We report on the maskless integration of micron-sized GaAs crystals on patterned Si substrates by metal organic vapor phase epitaxy. In order to adapt the mismatch between the lattice parameter and thermal expansion coefficient of GaAs and Si, 2 μm tall Ge crystals were first grown as virtual substrate by low energy plasma enhanced chemical vapor deposition. We investigate the morphological evolution of the GaAs structures grown on top of the Ge crystals at the transition towards full pyramids with energetically stable {111} facets. A substantial release of strain is shown in GaAs crystals with a height of 2 μm and lateral sizes up to 15×15 μm2 by both X-ray diffraction and photoluminescence.

Keywords

vapor phase epitaxy (VPE)x-ray diffraction (XRD)Ge
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1538: Symposium FF – Compound Semiconductors: Thin-Film Photovoltaics, LEDs and Smart Energy Controls , 2013 , pp. 283 - 289
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Akiyama, M, Kawarada, Y. and Kaminishi, K., J. Cryst. Growth 68, 21–26 (1984).CrossRefGoogle Scholar
Nozawa, K., Horikoshi, Y., Jap. J. Appl. Phys. 29, L540–L543 (1990).CrossRefGoogle Scholar
Fischer, R., Chand, N., Kopp, W., Morkog, H., Erickson, L. P. and Youngman, R., Appl. Phys. Lett. 47, 397 (1985).CrossRefGoogle Scholar
González, Y., González, L. and Briones, F., Jap. J. Appl. Phys. 31, L816–L819 (1992).CrossRefGoogle Scholar
Ting, S. M. and Fitzgerald, E. A. J. Appl. Phys. 87, 2618 (2000).CrossRefGoogle Scholar
Carlin, J. A., Ringel, S. A., Fitzgerald, E. A., Bulsara, M., Keyes, B. M.. Appl Phys. Lett. 76, 1884 (2000).CrossRefGoogle Scholar
Komatsu, Yuji, Hosotani, Keiji, Fuyuki, Takashi and Matsunami, Hiroyuki, Jap. J. of Appl. Phys., 36 5425 (1997).CrossRefGoogle Scholar
Falub, C. V., von Känel, H., Isa, F., Bergamaschini, R., Marzegalli, A., Chrastina, D., Isella, G., Müller, E., Niedermann, P., Miglio, L., Science 335, 1330 (2012).CrossRefGoogle Scholar
Rosenblad, C., von Känel, H., Kummer, M., Domman, A., and Muller, E., Appl. Phys. Lett, 76, 427, (2000).CrossRefGoogle Scholar
Fitzgerald, E. A., Chand, N., Journal of Electronic Materials 20, 10 (1991).Google Scholar
Li, J. Z., Bai, J., Park, J.-S., Adekore, B., Fox, K., Carroll, M., Lochtefeld, A., and Shellenbarger, Z., Appl. Phys. Lett. 91, 021114 (2007).CrossRefGoogle Scholar
Richter, M., Uccelli, E., Taboada, A.G., Caimi, D., Daix, N., Sousa, M., Marchiori, C., Siegwart, H., Falub, C.V., von Känel, H., Isa, F., Isella, G., Pezous, A., Dommann, A., Niedermann, P., Fompeyrine, J., J. Cryst. Growth, in press, (2013) http://dx.doi.org/10.1016/j.jcrysgro.2012.12.111 Google Scholar
Laermer, F., Schilp, A., U.S. Patent 5501893_3, 26 (1996).Google Scholar
Wang, W. I., Appl. Phys. Lett. 44, 1149 (1984).CrossRefGoogle Scholar
Yacobi, B. G., Holt, D. B., “Cathodoluminescence Microscopy of Inorganic Solids”, Springer, (1990).CrossRefGoogle Scholar
Pikus, G. E. and Bir, G. L., Sov. Phys. Solid State 1, 136 (1959).Google Scholar