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Integrated Optical and Electrical Modeling of a-Si:H Based Solar Cells

Published online by Cambridge University Press:  17 March 2011

Miro Zeman ,
René A.C.M.M. van Swaaij ,
Joost J.G. van den Heuvel  and
Wim Metselaar
Miro Zeman
Affiliation:
Delft University of Technology - DIMES, P.O. Box 5053, 2600 GB Delft, The Netherlands
René A.C.M.M. van Swaaij
Affiliation:
Delft University of Technology - DIMES, P.O. Box 5053, 2600 GB Delft, The Netherlands
Joost J.G. van den Heuvel
Affiliation:
Delft University of Technology - DIMES, P.O. Box 5053, 2600 GB Delft, The Netherlands
Wim Metselaar
Affiliation:
Delft University of Technology - DIMES, P.O. Box 5053, 2600 GB Delft, The Netherlands
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Abstract

New features of the ASA software package are described that allow the analyses of the performance of hydrogenated amorphous silicon (a-Si:H) based solar cells with rough interfaces and buffer and graded layers. Using the updated version of ASA improved understanding of i) the effect of the front and back contact roughness on the external quantum efficiency and the absorption of light in the individual layers of a-Si:H solar cells and ii) the role of band gap grading of the intrinsic a-SiGe:H layer in a solar cell is obtained. The simulated results using the ASA package agree well with measured data on solar cells and are used to give insight into the behavior of the internal parameters of the solar cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A25.1
Copyright
Copyright © Materials Research Society 2001

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References

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