Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T10:33:08.643Z Has data issue: false hasContentIssue false
  • English
  • Français

Integrated On-chip Planar Solenoid Inductors with Patterned Permalloy Cores for High Frequency Applications

Published online by Cambridge University Press:  01 February 2011

Jinsook Kim ,
Weiping Ni  and
Edwin C. Kan
Jinsook Kim
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853.
Weiping Ni
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853.
Edwin C. Kan
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853.
Get access

Abstract

The on-chip magnetic inductors with patterned permalloy (Ni80Fe20) cores are fabricated on Si-substrates with different resistivities and thicknesses as well as on thin membranes. With the patterned permalloy cores, the on-chip magnetic inductors achieve high self-resonant frequencies over 25GHz in thin membranes. To distinguish the influence from the permalloy core patterns and substrate losses on the inductance and quality factor, multiple solenoids in series and parallel are designed to investigate the resistive, capacitive, and magnetic coupling losses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 833: Symposium G – Materials, Integration, and Packaging Issues for High-Frequency Devices II , 2004 , G3.21
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yamaguchi, M., Baba, M., and Arai, K.-I., IEEE Trans. on Microwave Theory and Techniques, 49, 2331 (2001).Google Scholar
2. Yamaguchi, M., Suezawa, K., Baba, M., Arai, K.-I., Shimada, Y., Tanabe, S., and Itoh, K., IEEE Trans. on Magnetics, 36, 3514 (2000)Google Scholar
3. Zhuang, Y., Vroubel, M., Rejaei, B., and Burghartz, J.N., IEDM '02, 475 (2002)Google Scholar
4. Zhuang, Y., Rejaei, B., Boellaard, E., Vroubel, M., and Burghartz, J.N., IEEE Electron Device Letters, 24, 224 (2003)Google Scholar
5. Wang, P., Tien, N. C., and Kan, E. C., IEEE Trans. on Electron Devices, 51, 74 (2004)Google Scholar
6. Park, J. Y., and Allen, M. G., IEEE Trans. On Advanced Packaging, 22, 207 (1999)Google Scholar
7. Pinel, S., Cros, F., Nuttinck, S., Yoon, S W., Allen, M. G., and Laskar, J., IEEE MTT-S Digest, TH2A-6 (2003)Google Scholar
8. Lin, J. W., Chen, C. C., Huang, J. K., and Cheng, Y. T., IEEE RFIC, TUIFR-34 (2004)Google Scholar