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Insulator/GaN Heterostructures of Low Interfacial Density of States

Published online by Cambridge University Press:  15 March 2011

M. Hong ,
H. M. Ng ,
J. Kwo ,
A. R. Kortan ,
J. N. Baillargeon ,
K. A. Anselm ,
J. P. Mannaerts ,
A. Y. Cho ,
C. M. Lee  and
J. I. Chyi
...Show all authors
M. Hong
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
H. M. Ng
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
J. Kwo
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
A. R. Kortan
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
J. N. Baillargeon
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
K. A. Anselm
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
J. P. Mannaerts
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
A. Y. Cho
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
C. M. Lee
Affiliation:
Department of Electrical Engineering, National Central University, Taiwan
J. I. Chyi
Affiliation:
Department of Electrical Engineering, National Central University, Taiwan
T. S. Lay
Affiliation:
Institute of Opto-Electronic Engineering, National Sun Yat-Sen University, Taiwan
F. Ren
Affiliation:
Dept. Chem. Eng. and Dept. Mat. Sci. & Eng., University of Florida, Gainesville, Forida
C. R. Abernathy
Affiliation:
Dept. Mat. Sci. & Eng., University of Florida, Gainesville, Forida
S. J. Pearton
Affiliation:
Dept. Mat. Sci. & Eng., University of Florida, Gainesville, Forida
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Abstract

A review is given on insulators (oxides and nitrides) which have been deposited on GaN to form metal-insulator (oxides and nitrides)-semiconductor (MOS or MIS) diodes with a low interfacial density of states (Dit). These insulators include AlN, SiO2, Si3N4, SiO2/Ga2O3, and Ga2O3(Gd2O3). Techniques for depositing these insulators and methods for cleaning GaN surfaces prior to the insulator deposition are discussed. Recent progress on GaN MOSFET's (with SiO2/Ga2O3, and Ga2O3(Gd2O3) as gate dielectrics) and MISFET's (with AlN as a gate dielectric) is also reviewed. When exposed to room air, GaN surface is not as robust as previously thought. Therefore, preparation of a clean GaN surface for deposition of oxides and nitrides is necessary to achieve a low Dit. By heating GaN samples in UHV to clean the surfaces followed by deposition of Ga2O3(Gd2O3) and SiO2, we have achieved a low Dit with negligible hysteretic loops in the capacitance-voltage curves

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T2.2.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Pearton, S. J. et al. , The Electrochemical Society Interface, Summer issue, (2000).Google Scholar
2. Khan, M. A., Chen, Q., Sun, C. J., Shur, M. S., and Gelmark, B., Appl. Phys. Lett. 67, p.1429 (1995).Google Scholar
3. Wu, Y.-F., Keller, B. P., Keller, S., Kapolneck, D., Kozodoy, P., DenBaars, S. P., and Mishra, U. K., Appl. Phys. Lett. 69, p.1438 (1996).Google Scholar
4. Asbeck, P. M., Yu, E. T., Lau, S. S., Sullivav, G. J., Hove, J. Van, and Redwing, J. M., Electron. Lett. 33, p.1230 (1997).Google Scholar
5. Binari, S. C., Kruppe, W., Dietrich, H. B., Kelner, G., Wickenden, A. E., and Freitas, J. A., Solid State Electron. 41, p.1549 (1997).Google Scholar
6. Burm, J., Chu, K., Schaff, W. J., Eastman, L. F., Khan, M. A., Chen, Q., Yang, J. W., and Shur, M. S., IEEE Electron. Dev. Lett. 18, p.141 (1997).Google Scholar
7. Gaska, R., Chen, Q., Yang, J., Osinsky, A., Khan, M. A., and Shur, M., IEEE Electron. Dev. Lett. 18, p.492 (1997).Google Scholar
8. Akatas, O., Fan, Z. F., Botcharev, A., Mohammad, S. N., Roth, M., Jenkins, T., Kehias, L., and Morkoc, H., IEEE Electron. Dev. Lett. 18, p.293 (1997).Google Scholar
9. Shur, M. S., Mat. Res. Soc. Symp. Proc. 483, p.15 (1998).Google Scholar
10. Wu, Y.-F., Keller, B. P., Fini, P., Keller, S., Jenkins, T. J., Kenias, L. T., DenBaars, S. P., and Mishra, U. K., IEEE Electron. Dev. Lett. 19, p.50 (1998).Google Scholar
11. Ping, A. T., Chen, Q., Yang, J. W., Khan, M. A., and Adesida, I., IEEE Electron. Dev. Lett. 19, p.54 (1998).Google Scholar
12. Sullivan, G. J., Chen, M. Y., Higgins, J. A., Yang, J. W., Chen, Q., Pierson, R. C., and McDermott, B. T., IEEE Electron. Dev. Lett. 19, p.198 (1998).Google Scholar
13. Sheppard, S. T., Doverspike, K., Pribble, W. L., Allen, S. T., and Palmour, J. W., 56th Annual Device Research Conference, June (1998).Google Scholar
14. Mishra, U. K. and Keller, S., Naval Research Reviews, 51, vol. 1, p.56 (1999)Google Scholar
15. Pearton, S. J., Zolper, J. C., Shul, R. J., and Ren, F., J. Appl. Phys. 86, 1 (1999).Google Scholar
16. Ren, F., Lothian, J. R., Chen, Y. K., Karlicek, R., Toan, L., Schurman, M., Stall, R. A., Lee, J. W., and Pearton, S. J., Solid State Electron. 41, 1819 (1997).Google Scholar
17. Abernathy, C. R., Ren, F., Pearton, S. J., Hong, M., and Marcus, M., unpublished results (1997).Google Scholar
18. Ren, F., Abernathy, C. R., MacKenzie, J. D., Gila, B. P., Pearton, S. J., Hong, M., Marcus, M., Schurman, M. J., Baca, A. G., and Shul, R. J., 1997 MRS Symp. Proc. Vol. 483, “Power Semiconductor Materials and Devices”, p. 443, Ed. by Pearton, S.J. et al. .Google Scholar
19. Kawai, H., Hara, M., Nakamura, F., and Imanaga, S., Electron. Lett., 34, 592 (1998)Google Scholar
20. Cassey, H. C. Jr., Fountain, G. G., Alley, R. G., Keller, B. P., and DenBaars, S. P., Appl. Phys. Lett. 68, 1850 (1996).Google Scholar
21. Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T., and Umeno, M., Appl. Phys. Lett., 73, 809 (1998).Google Scholar
22. Hong, M., Ng, H. M., Kwo, J., Kortan, A. R., Baillargeon, J. N., Chu, S. N. G., Mannaerts, J. P., Cho, A. Y., Ren, F., Abernathy, C. R., Pearton, S. J., and Chyi, J. I., “Compound Semiconductor Power Transistors II and State-of-the-art Program on Compound Semiconductors XXXII”, p. 103, The Electrochimical Society Proceedings volume 2000-1, Ed. by Kopf, R. F., Baca, A. G., and Chu, S. N. G..Google Scholar
23. Hashizume, T., Nakasaki, R., and Hasegawa, H., Electronic Materials Conference, (1999)Google Scholar
24. Therrien, R., Lucovsky, G., and Davis, R. F., Phys. Stat. Sol. (a) 176, 793 (1999).Google Scholar
25. Ren, F., Hong, M., S. Chu, N. G., Marcus, M. A., Schurman, M. J., Baca, A., Pearton, S. J., and Abernathy, C. R., Appl. Phys. Lett., 73, 3893 (1998).Google Scholar
26. Ren, F., Abernathy, C. R., MacKenzie, J. D., Gila, B. P., Pearton, S. J., Hong, M., Marcus, M. A., Schurman, M. J., Baca, A. G., and Shul, R. J., Solid-State Electronics, 42, No. 12, 2177 (1998).Google Scholar
27. Hong, M., Anselm, K. A., Mannaerts, J. P., Kwo, J., Cho, A. Y., Kortan, A. R., Lee, C. M., Chyi, J. I., and Lay, T. S., presented at North American Conference on Molecular Beam Epitaxy, Banff, Canada, Oct. 10-13, 1999 and to be published in J. Vac. Sci. Technol. B May/Jun issue, (2000).Google Scholar
28. Hong, M., Mannaerts, J. P., Marcus, M. A., Kwo, J., Sergent, A. M., Chou, L. J., Hsieh, K. C., and Cheng, K. Y., J. Vac. Sci. Technol. B16(3), p.1395, 1998.Google Scholar
29. Smith, A. R., Ramachandran, V., Fenstra, R. M., Greve, D. W., Ptak, A., Myers, T., Sarney, W., Salamanca-Riba, L., Shin, M., and Skowronski, M., MRS Internet J. Nitride Semicond. Res. 3, 12 (1998).Google Scholar
30. Hong, M., Passlack, M., Mannerts, J. P., Kwo, J., S. Chu, N. G., Moriya, N., Hou, S. Y., and Fratello, V. J., J. Vac. Sci. Technol. B, 14, 2297, (1996).Google Scholar
31. Passlack, M., Hong, M., Mannaerts, J. P., Kwo, J., Opila, R. L., Chu, S. N. G., Moriya, N., and Ren, F., IEEE Transaction of Electron Devices, 44, p.214, (1997).Google Scholar
32. Ren, F., Hong, M., Hobson, W. S., Kuo, J. M., Lothian, J. R., Mannaerts, J. P., Kwo, J., Chen, Y. K., and Cho, A. Y., IEEE Int'l Electron Devices Mtg (IEDM) Technical Digest, p.943, (1996), and also in Solid State Electronics, 41 (11), 1751, (1997).Google Scholar
33. Hong, M., ICSICT'98. 5th Interantional Conf. On Solid-State and Integrated-Circuit Technology, Beijing, Oct. 21-23, 1998, p.685, IEEE Catalog Number 98 EX105, Ed. by Zhang, M. and Tu, K. N..Google Scholar
34. , Kwo, Murphy, D. W., Hong, M., Opila, R. L., Mannaerts, J. P., Sergent, A. M., and Masaitis, R. L., Appl. Phys. Lett., 75, 1116 (1999).Google Scholar
35. Hong, M., Lu, Z. H., Kwo, J., Kortan, A. R., Mannaerts, J. P., Krajewski, J. J., Hsieh, K. C., Chou, L. J., and Cheng, K. Y., Appl. Phys. Lett. 76 (3), p. 312, (2000).Google Scholar