Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-27T02:19:25.983Z Has data issue: false hasContentIssue false
  • English
  • Français

Insulating and Breakdown Characteristics of Low Temperature GaAs

Published online by Cambridge University Press:  15 February 2011

H. L. Grubin ,
J. P. Kreskovsky  and
R. Levy
H. L. Grubin
Affiliation:
Scientific Research Associates, Inc. Glastonbury, Connecticut 06033
J. P. Kreskovsky
Affiliation:
Scientific Research Associates, Inc. Glastonbury, Connecticut 06033
R. Levy
Affiliation:
Scientific Research Associates, Inc. Glastonbury, Connecticut 06033
Get access

Abstract

The electrical characteristics of an N(LT)N structure are studied through implementation of numerical simulation techniques for the case of donor traps 0.83 ev below the conduction band and acceptor traps 0.3 ev above the valence band. The results show characteristics sensitive to the relative densities of the traps. In particular, high acceptor trap / low donor trap concentrations generally result in low breakdown voltages, whereas high acceptor / high donor concentrations result in higher breakdown voltages.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 39
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Smith, F. W., MIT Doctoral Dissertation (1991)Google Scholar
2.Kurata, M., Numerical Analysis for Semiconductor Devices, Heath, D. C. and MA, Co. (1982)Google Scholar
3.Horio, K., Ikoma, T. and Yanai, H., IEEE Trans. Electron Devices ED-33, 1985 (1986).Google Scholar
4.Solomon, P. M. and Weiser, K., J. App. Phys. 70, 5408 (1991).10.1063/1.350198Google Scholar