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In-Situ Transmission Electron Microscopy Studies of the Oxidation of Si (111) 7X7

Published online by Cambridge University Press:  25 February 2011

J.M. Gibson
J.M. Gibson*
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07964
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Abstract

The kinematical approximation is valid for High-Energy Transmission Electron Diffraction from monolayers in planview. We use this fact to study quantitatively the attack of Si (111) 7×7 by 02. Oxygen is found to bind in the bridging position of the adatom backbonds and render the structure very stable during subsequent 02 exposure. Electron-beam exposure during dosing additionally creates rapid disordering which is presumed to represent SiOx formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 179
Copyright
Copyright © Materials Research Society 1990

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References

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