Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-23T14:56:05.469Z Has data issue: false hasContentIssue false
  • English
  • Français

In-situ Study on Effects of Annealing Temperature and Mo Interlayer on Stress Relaxation Behaviors of Pure Al Films on Glass Substrates

Published online by Cambridge University Press:  01 February 2011

Young-Bae Park ,
Soo-Jung Hwang ,
Yong-Duk Lee ,
Ja-Young Jung  and
Young-Chang Joo
Young-Bae Park
Affiliation:
[email protected], Andong National University, School of Materials Science and Engineering, Songcheon-Dong, Andong, Gyungbuk, 760-749, Korea, Republic of, +82-54-820-5121, +82-54-820-6126
Soo-Jung Hwang
Affiliation:
[email protected], Seoul National University, School of Materials Science and Engineering, Seoul, N/A, 151-742, Korea, Republic of
Yong-Duk Lee
Affiliation:
[email protected], Andong National University, School of Materials Science and Engineering, Andong, N/A, 760-749, Korea, Republic of
Ja-Young Jung
Affiliation:
[email protected], Andong National University, School of Materials Science and Engineering, Andong, N/A, 760-749, Korea, Republic of
Young-Chang Joo
Affiliation:
[email protected], Seoul National University, School of Materials Science and Engineering, Seoul, N/A, 151-742, Korea, Republic of
Get access

Abstract

The in-situ SEM observation of real-time hillock evolution in pure Al thin films on glass substrate during isothermal annealing at 194°C was analyzed quantitatively to understand the compressive stress relaxation mechanism by focusing on the effect of Mo interlayer between Al film and glass substrate. There is a good correlation between the hillock-induced stress relaxation and the measured stress relaxation by wafer curvature method. It is also clearly shown that the existence of Mo interlayer plays an important role in hillock formation probably due to the large difference in interfacial diffusivity of Al films.

Keywords

Alfilmstress/strain relationship
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 924: Symposium Z – Mechanics of Nanoscale Materials and Devices , 2006 , 0924-Z03-12
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Park, Y. B. and Jeon, I. S., Microelectronic Eng., 69, 26 (2003).Google Scholar
2. Park, Y. B. and Jeon, I. S., Microelectronic Eng., 71, 76 (2004).Google Scholar
3. Volkert, C. A., Alofs, C. F., Liefting, J. R., J. Mater. Res., 9, 1147 (1994).Google Scholar
4. Kim, D.K., Heiland, B., Nix, W. D., Arzt, E., Deal, M. D. and Plummer, J. D., Thin Solid Films, 371, 278 (2000).Google Scholar
5. Iwamura, E., T. Ohnishi and Yoshikawa, K., Thin Solid Films, 270, 450 (1995).Google Scholar
6. Chaudhari, P., J. Appl. Phys., 45, 4339 (1974).Google Scholar
7. Hwang, S. J., Lee, Y. D., Park, Y. B., Lee, J. H., Jeong, C. O., Joo, Y. C., Scripta Materialia, 54 1841 (2006).Google Scholar