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In-Situ Studies of the MBE Growth of CoSi2 on Si (111) in a UHV Transmission Electron Microscope

Published online by Cambridge University Press:  25 February 2011

J. M. Gibson ,
J. L. Batstone  and
R. T. Tung
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R. T. Tung
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

In-situ observations of the growth of CoSi2 films by Co deposition in an ultrahigh vacuum transmission electron microscope are described. Results include the observation of intermediate epitaxial phases (both hexagonally distorted Co2Si and CoSi) and the observation that pinholes nucleate in CoSi2 films after growth in a metastable layer mode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 151
Copyright
Copyright © Materials Research Society 1987

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