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In-Situ Preparation and Characterization of Superconducting Thin Films and Related Materials by Mocvd for the Development of Three Terminal Switching Devices

Published online by Cambridge University Press:  28 February 2011

R. Singh ,
S. Sinha  and
J. Narayan
R. Singh
Affiliation:
School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, OK 73019
S. Sinha
Affiliation:
School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, OK 73019
J. Narayan
Affiliation:
School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, OK 73019
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Abstract

Metalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a major technique for the fabrication of high temperature superconductor devices. In this paper, we present preliminary results of in-situ deposition of Y-Ba-Cu-0 thin films (Tc = 79K) by rapid isothermal processing assisted MOCVD on BaF2/silicon substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 1129
Copyright
Copyright © Materials Research Society 1990

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References

1 Singh, R., Sinha, S., Chou, P., Hsu, N. J., Radpour, F., Ullal, H. S., and Nelson, A. J., J. App. Phys. 66, 6179 (1989).Google Scholar
2 Singh, R., Thakur, R. P. S., Kumar, A., Chou, P., and Narayan, J., Appl. Phys. Lett. 56, 247 (1990).Google Scholar
3 Singh, R., J. App. Phys. 63, R 69 (1988).Google Scholar