Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T17:58:29.018Z Has data issue: false hasContentIssue false
  • English
  • Français

In-situ Observation of Formation Processes of Anodic Porous Alumina on a Si Substrate Using Infrared Absorption Spectroscopy

Published online by Cambridge University Press:  01 February 2011

Yasuo Kimura ,
Hirokazu Shiraki ,
Hisao Ishii ,
Sachiko Ono ,
Kingo Itaya  and
Michio Niwano
Yasuo Kimura
Affiliation:
Research Institute of Electrical Communication, Tohoku University, 2–1–1 Katahira, Aoba-ku, Sendai 980–8577, JapanPhone: +81–22–217–5502 E-mail: [email protected] CREST, Japan Science and Technology Corporation, Aoba-yama 04, Sendai, 980–8579, Japan
Hirokazu Shiraki
Affiliation:
Research Institute of Electrical Communication, Tohoku University, 2–1–1 Katahira, Aoba-ku, Sendai 980–8577, JapanPhone: +81–22–217–5502 E-mail: [email protected]
Hisao Ishii
Affiliation:
Research Institute of Electrical Communication, Tohoku University, 2–1–1 Katahira, Aoba-ku, Sendai 980–8577, JapanPhone: +81–22–217–5502 E-mail: [email protected] CREST, Japan Science and Technology Corporation, Aoba-yama 04, Sendai, 980–8579, Japan
Sachiko Ono
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Kogakuin University, 1–24–2 Nishi Shinjuku, Shinjuku-ku, Tokyo 163–8677, Japan
Kingo Itaya
Affiliation:
CREST, Japan Science and Technology Corporation, Aoba-yama 04, Sendai, 980–8579, Japan Depeartment of Applied Chemistry, Graduate School of Engineering, Tohoku University, Aoba-yama 04, Sendai, 980–8579, Japan
Michio Niwano
Affiliation:
Research Institute of Electrical Communication, Tohoku University, 2–1–1 Katahira, Aoba-ku, Sendai 980–8577, JapanPhone: +81–22–217–5502 E-mail: [email protected] CREST, Japan Science and Technology Corporation, Aoba-yama 04, Sendai, 980–8579, Japan
Get access

Abstract

We investigated formation processes of a porous anodic alumina film on a p-type silicon (Si) substrate using infrared absorption spectroscopy in the multiple internal reflection geometry (MIR-IRAS). We observed drastic IR spectral changes when porous anodic alumina film approached interfaces between an aluminum (Al) layer and a Si substrate. The intensity of the IR absorption peaks due to water (H2O) molecules and silicon oxides (SiO2) increased simultaneously with a spike of anodic current density. The IR spectral changes indicated that the penetration of electrolytes brought about inhomogeneous oxidation of a Si substrate surface. We observed that the arrangement of the SiO2 nanodots closely reflected that of pores of a porous anodic alumina film. IR absorption peaks due to porous anodic alumina finally disappeared. The formation of SiO2 nanodots on a Si substrate promoted penetration of electrolytes to peel the porous anodic alumina film off it.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 788: Symposium L – Continuous Nanophase and Nanostructured Materials , 2003 , L8.6
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Masuda, H. and Fukuda, K., Science 268, 1466 (1995).Google Scholar
2. Li, J., Papadopoulos, C., Xu, J. M. and Moskovits, M., Appl. Phys. Lett. 75, 367 (1999).Google Scholar
3. Lu, B., Bharathulwar, S., Laughlin, D. E., and Lambeth, D. N. J. Appl. Phys. 87, 4721 (2000).Google Scholar
4. Nakao, M., Oku, S., Tanaka, H., Shibata, Y., Yokoo, A., Tamamura, T., and Masuda, H. Opt. Quant. Electron. 34, 183 (2002).Google Scholar
5. Masuda, H., Nishio, K., and Baba, N., J. Mater. Sci. Lett. 13, 338 (1994).Google Scholar
6. Ono, S., Masuko, N., Surf. Caot. Tech. 169–170, 139 (2003).Google Scholar
7. Masuda, H., Yasui, K., Sakamoto, Y., Nakao, M., Tamamura, T., and Nishio, K., Jpn. J. Appl. Phys, 40, L1267 (2001).Google Scholar
8. Shingubara, S., Okino, O., Murakami, Y., Sakaue, H., and Takahagi, T., J. Vac. Sci. Technol. B19, 1901 (2001).Google Scholar
9. Kanamori, Y., Hane, K., Sai, H., and Yugami, H., Appl. Phys. Lett. 78, 142 (2001).Google Scholar
10. Crouse, D., Lo, Y., Miller, A. E., and Crouse, M., Appl. Phys. Lett. 76, 49 (2000).Google Scholar
11. Rrost, R. L., Kloprogge, J. T., Russell, S. C., and Szetu, J., Appli. Spectrosc. 53, 572 (1999).Google Scholar
12. Chu, S. Z., Wada, K, Inoue, S., and Todoroki, S., J. Electrochem. Soc. 149, B321 (2002).Google Scholar
13. Asoh, H., Matsuo, M., Yoshihama, M., and Ono, S., Appl. Phys. Lett. 83, 4408 (2003).Google Scholar