Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-20T07:17:50.211Z Has data issue: false hasContentIssue false
  • English
  • Français

In-Situ Laser Processing and Microstructural Characteristics of YBa2Cu3O7−δ Thin Films on Si with TiN Buffer Layer

Published online by Cambridge University Press:  01 January 1992

P. Tiwari ,
T. Zheleva  and
J. Narayan
P. Tiwari
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–7916
T. Zheleva
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–7916
Get access

Abstract

We have prepared high-quality superconducting YBa2Cu3O7−δ (YBCO) thin films on Si(100) with TiN as a buffer layer using in-situ multitarget deposition system. Both TiN and YBCO thin films were deposited sequentially by KrF excitner laser ( λ = 248 nm ) at substrate temperature of 650°C. Thin films were characterized using X-ray diffraction (XRD), four-point-probe ac resistivity, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Rutherford backscattering (RBS). The TiN buffer layer was epitaxial and the epitaxial relationship was found to be cube on cube with <100> TiN // <100> Si. YBCO thin films on Si with TiN buffer layer showed the transition temperature of 90–92K with Tco (zero resistance temperature) of ∼84K. We have found that the quality of the buffer layer is very important in determining the superconducting transition temperature of the thin film. The effects of processing parameters and the correlation of microstructural features with superconducting properties are discussed indetail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 311
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Narayan, J., Biunno, N., Singh, R., Holland, O.W., and Auciello, O., Appl. Phys. Lett., 51, 1845 (1987).Google Scholar
2. Lee, W.Y., Salem, J., Lee, V., Huang, T., Savoy, R., Deline, V., and Duran, J., Appl. Phlys. Lett., 52, 2263 (1988).Google Scholar
3. Mogro-Campero, A., Turner, L.G., Halland, E.L., and Burell, M.C., Appi. Plivs. Lett., 52, 2068 (1988).Google Scholar
4. Lee, J.W., Schlesinger, T.E., Stamper, A.K., Migliuolo, M., Greve, D.W., and Laughlin, E., J. Appl. Phys., 64, 6502 (1988).Google Scholar
5. Fork, D.K., Fenner, D.B., Barton, R.W., Phillips, J.M., Connell, G.A.N., Boyce, J.B., and Geballe, T.H., Appl. Phys. Lett., 57, 1161 (1990).Google Scholar
6. Miura, S., Yoshitaka, T., Matsubara, S., Miasaka, Y., Shohata, N., and Satoh, T., Appl. Phys. Lett., 53, 1967 (1988).Google Scholar
7. Wu, X.D., Inam, A., Hagde, M.S., Wilkens, B., Chang, C.C., Hwang, D.M., Nazar, L., Venkatesan, T., Miura, S., Matsubara, S., Miasaka, Y., and Shohata, N., Appl. Plhys. Lett., 54, 754 (1989).Google Scholar
8. Tiwari, P., Sharan, S., and Narayan, J., J. Appl. Phys., 69, 8358 (1991).Google Scholar
9. Fenner, D.B., Biegelsen, D.K., and Bringans, R.D., J. Appl. Phys., 66, 419 (1989).Google Scholar
10. Singh, R.K., Narayan, J., Singh, A.K., and Lee, C.B., J. Appl. Phys., 67, 3448 (1989).Google Scholar
11. Singh, R.K., Ganapathi, L., Tiwari, P., and Narayan, J., Appl. Plhys. Lett., 55, 2351 (1989).Google Scholar
12. Jagannadham, K. and Narayan, J., Phil. Mag. A, 59, 917 (1989).Google Scholar