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In-Situ Growth of SiC in MoSi2 by Melt Processing

Published online by Cambridge University Press:  15 February 2011

Daniel J. Tilly ,
J. P. A. Löfvander  and
C. G. Levi
Daniel J. Tilly
Affiliation:
Engineering Materials Department, University of California, Santa Barbara CA 93106
J. P. A. Löfvander
Affiliation:
Engineering Materials Department, University of California, Santa Barbara CA 93106
C. G. Levi
Affiliation:
Engineering Materials Department, University of California, Santa Barbara CA 93106
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Abstract

The growth of SiC during solidification of Mo-Si-C melts was investigated to explore the potential for developing in-situ refractory reinforcements for MoSi2 matrices. Volume fractions of up to 20% were readily incorporated by arc melting. Primary β-SiC grows as equiaxed particles, plates and hopper crystals, whereas secondary SiC grows with ribbon, thin flake or whisker morphologies. The dominant facets of both primary and secondary SiC are of the (111) and {002) type, which are also characteristic of the equilibrium crystal shape. There is a clear orientation relationship between the phases wherein the close packed planes and directions of the C11b and B3 structures are parallel.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 273: Symposium Q – Intermetallic Matrix Composites II , 1992 , 295
Copyright
Copyright © Materials Research Society 1992

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References

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