Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-29T07:49:56.494Z Has data issue: false hasContentIssue false
  • English
  • Français

In-Situ Electromigration Damage of Al Interconnect Lines and the Influence of Grain Orientation

Published online by Cambridge University Press:  10 February 2011

A. Buerke ,
H. Wendrock ,
T. KÖtter ,
S. Menzel ,
K. Wetzig  and
A. v. Glasow
A. Buerke
Affiliation:
Institute of Solid State and Materials Research, POB 270016, D-01 171 Dresden, Germany contact: [email protected]; [email protected]
H. Wendrock
Affiliation:
Institute of Solid State and Materials Research, POB 270016, D-01 171 Dresden, Germany contact: [email protected]; [email protected]
T. KÖtter
Affiliation:
Institute of Solid State and Materials Research, POB 270016, D-01 171 Dresden, Germany contact: [email protected]; [email protected]
S. Menzel
Affiliation:
Institute of Solid State and Materials Research, POB 270016, D-01 171 Dresden, Germany contact: [email protected]; [email protected]
K. Wetzig
Affiliation:
Institute of Solid State and Materials Research, POB 270016, D-01 171 Dresden, Germany contact: [email protected]; [email protected]
A. v. Glasow
Affiliation:
Siemens AG, Munich, GERMANY
Get access

Abstract

In this work the authors want to report some experiments concerning unpassivated Al interconnect lines of 8 and 1.4 microns width which have been damaged by in-situ electromigration in the SEM (temperature 230°C, current density 2 and 4×106 A/cm2, respectively). The wider line represents a polygrained structure with few blocking grains spanning the whole width, whereas the narrow line shows bamboo structure. Before electromigration, the local orientation and thus the position of all grain boundaries was mapped by EBSD technique along the entire interconnect line. During and after in-situ current loading in the SEM, the damaged sites were correlated with the grain boundary map to locate where the diffusion paths are situated most likely. It was found that not the deviation from <111> fibre texture, but the misorientation class of the grain boundaries is essential for the localization of the fatal defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 109
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. E., Arzt, O., Kraft, R., Spolenak: Z. Metallkunde 87, 934 (1996).Google Scholar
2. D., Gerth, R., Schwarzer: Textures and Microstructures 21, 177 (1993).Google Scholar
3. Field, D. P., Dingley, D. J.: Solid State Technology 11/95, 91 (1995).Google Scholar
4. R., Schwarzer: MRS Syrup. Proc. 472, 281 (1997).Google Scholar
5. A.N., Campbell, R.E., Mikawa, D.B., Knorr: J. of Electronic Materials 22, 589 (1993).Google Scholar
6. A., Gladkikh et al: MRS Symup. Proc. 391, 283 (1995).Google Scholar
7. Wang, P. H., Ho, P. S., Lee, C., Kawasaki, H.: AlP Conf. Proc. 373, 143 (1996).Google Scholar
8. Lloyd, J. R.: Defect and Diffusion Forum Vols. 143–147, 1661 (1997)Google Scholar