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In-Situ Dual-Wavelength Ellipsometry and Light Scattering Monitoring of Si/Si1−xGex Heterostructures and Multiuantum Wells

Published online by Cambridge University Press:  22 February 2011

C. Pickering ,
D.A.O. Hope ,
W.Y. Leong ,
D.J. Robbins  and
R. Greef
C. Pickering
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs WR14 3PS, UK
D.A.O. Hope
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs WR14 3PS, UK
W.Y. Leong
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs WR14 3PS, UK
D.J. Robbins
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs WR14 3PS, UK
R. Greef
Affiliation:
Dept of Chemistry, University of Southampton, Southampton, S09 5NH, UK
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Abstract

In-situ dual-wavelength ellipsometry and laser light scattering have been used to monitor growth of Si/Si1−x,Gex heterojunction bipolar transistor and multi-quantum well (MQW) structures. The growth rate of B-doped Si0 8Ge0.2 has been shown to be linear, but that of As-doped Si is non-linear, decreasing with time. Refractive index data have been obtained at the growth temperature for x = 0.15, 0.20, 0.25. Interface regions ∼ 6-20Å thickness have been detected at hetero-interfaces and during interrupted alloy growth. Period-to-period repeatability of MQW structures has been shown to be ±lML.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 53
Copyright
Copyright © Materials Research Society 1994

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References

1. Pickering, C., in Handbook of Crystal Growth 3B, edited by Hurle, D. T. J. (North Holland, Amsterdam, 1994) (in press).Google Scholar
2. Pickering, C., Thin Solid Films, 206, 275 (1991).Google Scholar
3. Pickering, C., Carline, R. T., Robbins, D. J., Leong, W. Y., Gray, D. E. and Greef, R., Thin Solid Films, 223, 126 (1993).Google Scholar
4. Robbins, D. J., Glasper, J. L, Cullis, A. G. and Leong, W. Y., J. Appl. Phys, 69, 3719 (1991).CrossRefGoogle Scholar
5. Woollam, J. A. Co., 650 J St., Lincoln, NE 68508, USA.Google Scholar
6. Pidduck, A. J., Robbins, D. J., Cullis, A. G., Leong, W. Y. and Pitt, A. D., Thin Solid Films, 222, 98 (1993).Google Scholar
7. Ohtani, N., Mokler, S. M., Xie, M. H., Zhang, J. and Joyce, B. A., Surf. Sci, 284, 305 (1993).Google Scholar
8. Glasper, J. L. (unpublished work).Google Scholar
9. Humlicek, J. and Garriga, M., Appl. Phys. A, (1993) (in press).Google Scholar