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In-Situ Chemical Concentration control cor Wafer Wet Cleaning

Published online by Cambridge University Press:  10 February 2011

Ismail Kashkoush ,
Eric Brause ,
Richard Novak  and
Robert Grant
Ismail Kashkoush
Affiliation:
SubMicron Systems Corporation, 6330 Hedgewood Dr. #150, Allentown, PA 18106
Eric Brause
Affiliation:
SubMicron Systems Corporation, 6330 Hedgewood Dr. #150, Allentown, PA 18106
Richard Novak
Affiliation:
SubMicron Systems Corporation, 6330 Hedgewood Dr. #150, Allentown, PA 18106
Robert Grant
Affiliation:
SubMicron Systems Corporation, 6330 Hedgewood Dr. #150, Allentown, PA 18106
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Abstract

The continuously increasing integration of today's advanced semiconductors requires increasingly tight process control in the IC manufacturing steps. This paper demonstrates the use of conductivity sensors to monitor and control the chemical concentrations of RCA cleaning and HF etching solutions. Electrodeless conductivity sensors were used to monitor and regulate the concentration of these process chemicals. A linear relationship between the conductivity of the solution and the chemical concentration was obtained within the range studied. A chemical monitoring and concentration scheme (ICE-1™) was developed. Different concentrations of RCA and HF solutions were investigated. Results show that these techniques are suitable for monitoring and controlling the concentration of chemicals in the process tanks for better process control. These techniques provide a lower cost of ownership of the process due to longer bath lives and the use of dilute chemicals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 311
Copyright
Copyright © Materials Research Society 1997

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References

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