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In-Situ and Ex-Situ Studies of Silicon Interfaces and Nanostructures by Ellipsometry and Rds

Published online by Cambridge University Press:  15 February 2011

U. Rossowl ,
L. Mantese ,
U. Frotscher ,
D. E. Aspnes  and
W. Richter
U. Rossowl
Affiliation:
North Carolina State Univ., Phys. Dept., Raleigh, NC 27695-8202 TU Berlin, Physik, PN6-1, D-10623 Berlin, Germany
L. Mantese
Affiliation:
North Carolina State Univ., Phys. Dept., Raleigh, NC 27695-8202
U. Frotscher
Affiliation:
TU Berlin, Physik, PN6-1, D-10623 Berlin, Germany
D. E. Aspnes
Affiliation:
North Carolina State Univ., Phys. Dept., Raleigh, NC 27695-8202
W. Richter
Affiliation:
TU Berlin, Physik, PN6-1, D-10623 Berlin, Germany
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Abstract

We report surface-induced optical anisotropy (SIOA) spectra and dielectric function data of vicinal Si(001) surfaces using reflectance-difference spectroscopy (RDS) and spectroscopic ellipsometry (SE). To find the main contributions of the optical response we took data for clean and by hydrogen, oxygen, and arsenic modified surfaces. The SIOA lineshapes, as measured by reflectance-difference (RD) spectroscopy, can be either derivative-like or similar to the dielectric function as measured by SE. The derivative-like spectra appear to be associated with step contributions while the dielectric-function-like behavior appears to arise from terrace dimers and/or changes in chemical species bonded to the steps. In addition, we present SE data of silicon nanostructures formed by electrochemical etching and find that their behavior is dominated by interface properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 371
Copyright
Copyright © Materials Research Society 1996

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