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InSb: A Key Material for IR Detector Applications

Published online by Cambridge University Press:  25 February 2011

S. R. Jost ,
V. F. Meikleham  and
T. H. Myers
S. R. Jost
Affiliation:
Electronics Laboratory, General Electric Company, Syracuse, NY 13221
V. F. Meikleham
Affiliation:
Electronics Laboratory, General Electric Company, Syracuse, NY 13221
T. H. Myers
Affiliation:
Electronics Laboratory, General Electric Company, Syracuse, NY 13221
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Abstract

InSb has served as an important mid-wave IR (λ=3−5μm) detector material for several decades. In this presentation, we will briefly review General Electric's InSb Charge Injection Device technology. Emphasis will be placed on device performance as a function of material parameters. A new InSb materials technology utilizing liquid phase epitaxy will be described. This epitaxial growth technology improves InSb material parameters and increases minority carrier lifetimes by more than two orders of magnitude to near the Auger limit. Comparisons will be made between available bulk material parameters and that of the epitaxial material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 429
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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2. Jost, S.R., Proceedings of SPIE, 409, “Technical Issues in Infrared Detectors and Arrays”, Esther Krikorian, Editor, 62 (1983).Google Scholar