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In-Plane Uniaxial Magnetic Anisotropy of Cobalt Doped Y3Fe5O12 Epitaxial Films

Published online by Cambridge University Press:  10 February 2011

Darren Dale ,
G. Hu ,
Vincent Balbarin  and
Y. Suzuki
Darren Dale
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
G. Hu
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Vincent Balbarin
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Y. Suzuki
Affiliation:
[email protected]
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Abstract

In an effort to develop a magnetic biasing layer for potential applications in integrated devices, we have grown thin films of Y3Fe5O12 with increased uniaxial anisotropy by doping with varying Co2+, concentration. To compensate for the charge differential between Co2+ and Fe3+, Ge4+ and Ce4+ are substituted for Fe3+ and y3+, respectively. These garnet films, prepared using pulsed laser deposition on (110) oriented Gd3Ga5O12 substrates, exhibit excellent crystallinity as determined from X-ray diffraction and Rutherford backscattering spectroscopy. The addition of Co2+ in Y3Fe5O12 films enhances the in-plane uniaxial anisotropy over an order of magnitude, depending on composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 603: Symposium KK – Materials Issues for Tunable RF & Microwave Devices , 1999 , 95
Copyright
Copyright © Materials Research Society 2000

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