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In-Plane Optical Anisotropies of AlxGa1-xN films in their Regions of Transparency

Published online by Cambridge University Press:  10 February 2011

U. Rossow ,
N. V. Edwards ,
M. D. Bremser ,
R. S. Kern ,
H. Liu ,
R. F. Davis  and
D. E. Aspnes
U. Rossow
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202 Now at the Department of Physics, University of Ilmenau, Ilmenau, Germany
N. V. Edwards
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
M. D. Bremser
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
R. S. Kern
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
H. Liu
Affiliation:
Emcore, 35 Elizabeth St., Somerset, NJ 08873. Now at Hewlett-Packard, San Jose, CA 95131
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
D. E. Aspnes
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202 Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907 Corresponding author: [email protected]
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Abstract

GaN, AlxGa1–xN, and AlN layers exhibit interference oscillations and bandgap-related features in their reflectance-difference (-anisotropy) (RD/RA) spectra. We concentrate on the interpretation of interference-related data, providing a general expression for these optical anisotropics and discussing mechanisms that originate in the layers themselves. These include anisotropic strain in the plane of the layer, a tilt of the c axis with respect to the surface normal, and non-normal-incidence illumination. We estimate the magnitudes of these contributions, and show that they are consistent with those observed. In principle these contributions can be separated by their different azimuthal dependences. The complex pattern of the data for AlxGa1–xN and AlN indicate that contributions from several layers are present.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 835
Copyright
Copyright © Materials Research Society 1997

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References

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