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Injection-Level Spectroscopy of Metal Impurities in Silicon

Published online by Cambridge University Press:  10 February 2011

R.K. Ahrenkiel  and
S. Johnston
R.K. Ahrenkiel
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
S. Johnston
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
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Abstract

Using a modified photoconductive eddy-current technique, excess carrier decay can be measured and used to identify the specific defect dominating recombination. As the dynamic range of the measurement system is linear over about three orders of magnitude, the injection-level spectroscopy technique can be performed in a single measurement for rapid defect identification.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 575
Copyright
Copyright © Materials Research Society 1998

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