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InGaAs/GaAs Strained-Layer QW Vertical Cavity Surface Emitting Laser Structures grown on GaAs (311)A Substrates by MBE

Published online by Cambridge University Press:  10 February 2011

M. Takahashi ,
P. Vaccaro ,
K. Fujita  and
T. Watanabe
M. Takahashi
Affiliation:
ATR Optical and Radio Communications Research Laboratories, 2-2 Hikaridai, Seika-cho, Soraku-gun, Kyoto 61.9-02 JAPAN
P. Vaccaro
Affiliation:
ATR Optical and Radio Communications Research Laboratories, 2-2 Hikaridai, Seika-cho, Soraku-gun, Kyoto 61.9-02 JAPAN
K. Fujita
Affiliation:
ATR Optical and Radio Communications Research Laboratories, 2-2 Hikaridai, Seika-cho, Soraku-gun, Kyoto 61.9-02 JAPAN
T. Watanabe
Affiliation:
ATR Optical and Radio Communications Research Laboratories, 2-2 Hikaridai, Seika-cho, Soraku-gun, Kyoto 61.9-02 JAPAN
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Abstract

We report the crystal growth conditions and lasing characteristics of InGaAs-GaAs strained-layer quantum well vertical cavity surface emitting lasers (VCSELs) grown on GaAs(311)A substrates by molecular beam epitaxy. A significantly smooth surface and high reflectivity of more than 99 % were achieved. Very flat and dislocation-free AlAs/GaAs hetero-interfaces were obtained. Furthermore, a very low threshold of 5.5 mA and current density of 270 A/cm2 have been achieved for the first time under CW operation at room temperature. In addition, we demonstrate stable polarization characteristics at high currents. These results are believed to be a consequence of both the predicted high gain and anisotropic gain distribution on the (311) surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 361
Copyright
Copyright © Materials Research Society 1996

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