Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T17:30:33.218Z Has data issue: false hasContentIssue false
  • English
  • Français

InGaAs/GaAs Graded Superlattices in Photodetectors for Wavelengths Beyond 1 μm

Published online by Cambridge University Press:  28 February 2011

R. Mariella ,
J. Morse  and
Z. Liliental-Weber
R. Mariella
Affiliation:
Lawrence Livermore National Lab., PO Box 808, MS L228, Livermore, CA 94550
J. Morse
Affiliation:
Lawrence Livermore National Lab., PO Box 808, MS L228, Livermore, CA 94550
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley Lab., 1 Cyclotron Rd., 62-203, Berkeley, CA 94720
Get access

Abstract

We have used MBE to grow graded InxGa1−xAs/GaAs superlattices on GaAs substrates as buffers for larger period, constant composition InxGa1−xAs/GaAs superlattices. TEM analysis shows that there are numerous crystal defects associated with the presence of strained layers, but, in many cases, the buffer layers confine these defects to areas outside of the strained-layer superlattices. PIN detectors fabricated from these structures show external quantum efficiencies up to 2.7 %.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 297
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Rogers, D.L., Woodall, J.M., Pettit, G.D., Mclnturff, D., IEEE Electron Device Lett., 9, 515 (1989).Google Scholar
2. Zirngibl, M., Bischoff, J.C., Theron, D., Ilegems, M., IEEE Electron. Device Lett., 10, 336 (1989).Google Scholar
3. Jagannath, C., Silletti, A., Choudhury, A., Elman, B., Melman, P., Koteles, E., Presented at 16th Intl. Symposium on GaAs and Related Compounds, Sept. 1989, Karuizawa, Japan.Google Scholar
4. Eck, T. E. van, private communication.Google Scholar
5. Eck, T. E. van et al. , paper WA3-1, “A Strained Superlattice Buffer for InGaAsGaAs Quantum Wells”, presented at the Quantum Wells for Optics and Optoelectronics Topical Meeting, Salt Lake City, March 1989. Cosponsored by AFOSR, IEEE, and OSA.Google Scholar
6. Bowers, J.E. and Burrus, C.A., IEEEJ. Lightwave Tech., LT–5, (10), 1339 (1987).Google Scholar