Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T15:30:08.175Z Has data issue: false hasContentIssue false
  • English
  • Français

Infrared-Sensitive Photovoltaic Devices for Thermophotovoltaic Applications

Published online by Cambridge University Press:  10 February 2011

Navid S. Fatemi ,
David M. Wilt ,
Richard W. Hoffman JR.  and
Victor G. Weizer
Navid S. Fatemi
Affiliation:
Essential Research, Inc., Cleveland, OH
David M. Wilt
Affiliation:
NASA Lewis Research Center, Cleveland, OH
Richard W. Hoffman JR.
Affiliation:
Essential Research, Inc., Cleveland, OH
Victor G. Weizer
Affiliation:
Essential Research, Inc., Cleveland, OH
Get access

Abstract

One of the critical components in a thermophotovoltaic (TPV) system is the infrared-sensitive photovoltaic (PV) semiconductor device that converts the emitted radiation to electricity. Currently, several semiconductor material systems are under development by various workers in the field. The most common are InGaAs/InP, GaSb, and InGaSbAs/GaSb. These devices normally have electronic energy bandgap values in the range of 0.50-0.74 eV. In addition, the design and structure of these devices fall into two distinct formats: conventional planar and monolithic interconnected module (MIM). The conventional planar devices normally have one semiconductor junction and are high-current/low-voltage devices. In a MIM, small area PV cells are connected in series monolithically, on a semi-insulating substrate. This results in the formation of a single high-voltage/low-current module. Electrical and optical performance results for MIMs with electronic energy bandgaps of 0.60 and 0.74 eV will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 551: Symposium JJ – Materials in Space-Science, Technology & Exploration , 1998 , 69
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Fatemi, N. S., Wilt, D. M., Jenkins, P.P., Weizer, V.G., Hoffman, R.W., Murray, C.S., Scheiman, D., Brinker, D., and Riley, D., “InGaAs Monolithic Interconnected Modules (MIMs),” Twenty Sixth Photovoltaic Specialists Conf. (PVSC), 1997, p. 799.Google Scholar
[2] Wilt, D. M., Fatemi, N. S., Jenkins, P.P., Weizer, V.G., Hoffman, R.W., Jain, R.K., Murray, C.S., and Riley, D., “Electrical and Optical Performance Characteristics of 0.74 eV p/n InGaAs Monolithic Interconnected Modules,” Third NREL TPV Conference, 1997.Google Scholar
[3] Fatemi, N. S., Wilt, D. M., Jenkins, P.P., Hoffman, R.W., Weizer, V.G., Murray, C.S., and Riley, D., “Materials and Process Development for the Monolithic Interconnected Module (MIM) InGaAs/InP TPV Devices”, Third NREL TPV Conference, 1997.Google Scholar
[4] Ward, J. S., Duda, A., Wanlass, M.W., Carapella, J.J., Wu, X., Matson, R.J., Coutts, T.J., and Moriarty, T., “A Novel Design for Monolithically Interconnected Modules (MIMs) for Thermophotovoltaic Power Conversion,” Third NREL TPV Conference, 1997, p. 227.Google Scholar
[5] Wilt, D. M., Fatemi, N. S., Jenkins, P.P., Hoffman, R.W., Landis, G.A., and Jain, R.K., “Monolithically Interconnected InGaAs TPV Module Development,” Twenty fifth Photovoltaic Specialists Conf. (PVSC), 1996.Google Scholar
[6] Wojtczuk, S., “Comparison of 0.55 eV InGaAs Single-Junction vs. Multi-Junction TPV Technology,” Third NREL TPV Conference, 1997.Google Scholar
[7] Wilt, D. M., Fatemi, N. S., Hoffman, R.W., Jenkins, P., Brinker, D., Scheiman, D., & Jain, R., “High efficiency InGaAs photovoltaic devices for thermophotovoltaic applications,” Appl. Phys. Lett., 64, 2415 (1994).Google Scholar
[8] Fraas, L.M., Huang, H.X., Ye, S.Z., Hui, S., Avery, J., and Ballantyne, R., “Low Cost High Power GaSb Photovoltaic Cells,” Third NREL TPV Conference, 1997, p. 33.Google Scholar
[9] Wang, C.A., Choi, H.K., Turner, G.W., Spears, D.L., Manfra, M.J., and Charache, G.W., “Lattice-Matched Epitaxial GaInAsSb/GaSb Thermophotovoltaic Devices,” Third NREL TPV Conference, 1997, p. 75.Google Scholar
[10] Clevenger, M.B., Murray, C.S., and Riley, D.R., “Spectral Utilization in Thermophotovoltaic Devices,” Materials Research Society (MRS) Fall Meeting, December 1997, Boston, MA.Google Scholar
[11] Data presented by Knolls Atomic Power Labs (KAPL) in a review meeting held in January of 1998 in Schenectady, NY.Google Scholar
[12] Wilt, D.M., Murray, C.S., Fatemi, N.S., and Weizer, V.G., “n/p/n Tunnel Junction InGaAs Monolithic Interconnected Module (MIM),” Fourth NREL TPV Conference, Denver, CO, 1998.Google Scholar
[13] Charache, G.W., Egley, J.L., Danielson, L.R., Depoy, D.M., Baldasaro, P.F., Campbell, B.C., Hui, S., Fraas, L.M., and Wojtczuk, S.J., “Current Status of Low-Temperature Radiator TPV Devices”, Twenty-fifth IEEE PVSC, 1996, p. 137.Google Scholar