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Infrared-Photoconductivity Due to Sub-Band Transitions in PbTe/Pb1−xEuxTe and PbSe/Pb1−xMnxSe
Published online by Cambridge University Press: 15 February 2011
Abstract
The photoconductive (PC) properties of MBE grown PbTe/Pb1−xEuxTe (x<6.7%) and of PbSe/Pb1−xMnxSe (x<3%) multi quantum (MQW) well samples were investigated in the midinfrared region from 100 meV to 500 meV in the temperature range from 5 K up to 210 K. Whereas in PbTe/Pb1−xEuxTe MQW's electrons and holes are confined in the PbTe layers, PbSe/Pb1−xMnxSe forms a staggered system with electrons confined in the PbSe/Pb1−xMnxSe layers and holes confined in the PbSe layers. Consequently, the transitions between electric subbands in the PbTe/Pb1−xEuxTe MQW's give rise to a step like increase of the PC signal whenever the photon energy hv coincides with the interband transition energies between hole and electron subbands (selection rule Δn = 0). For the range of well widths investigated (42 Å to 91 Å ) distinctive steps in the photoconductivity spectra were observed. In the PbSe/Pb1−xMnxSe MQW's the absorption signals show a typical type II superlattice (SL) behaviour and thus the photoconductivity response is also much weaker than for the PbTe/Pb1−xEuxTe MQW's.
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- Copyright © Materials Research Society 1994