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Infrared-Absorption of Thermal Donors in Silicon

Published online by Cambridge University Press:  15 February 2011

Robert Oeder  and
Peter Wagner
Robert Oeder
Affiliation:
Wacker-Chemie,
Peter Wagner
Affiliation:
Heliotronic Gmbh, D-8263 Burghausen, Frg
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Abstract

Thermal donors generated in CZ-silicon by annealing at 450° C are investigated by infrared absorption spectroscopy.Up to nine double-donors can be distinguished due to their line spectra characteristic for effective-mass-like donors.Their number and their concentrations depend on the duration of the thermal treatment. The formation of the different donors is ruled by complicated kinetics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 171
Copyright
Copyright © Materials Research Society 1982

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References

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