Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T02:35:05.315Z Has data issue: false hasContentIssue false
  • English
  • Français

Infrared-Absorption of Thermal Donors in Silicon

Published online by Cambridge University Press:  15 February 2011

Robert Oeder  and
Peter Wagner
Robert Oeder
Affiliation:
Wacker-Chemie,
Peter Wagner
Affiliation:
Heliotronic Gmbh, D-8263 Burghausen, Frg
Get access

Abstract

Thermal donors generated in CZ-silicon by annealing at 450° C are investigated by infrared absorption spectroscopy.Up to nine double-donors can be distinguished due to their line spectra characteristic for effective-mass-like donors.Their number and their concentrations depend on the duration of the thermal treatment. The formation of the different donors is ruled by complicated kinetics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 171
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Graff, K., Pieper, H., J. of Electronic Mat. 4, 281 (1975)Google Scholar
2. Helmreich, D., Sirtl, E. in “Semiconductor Silicon 1977”, Eds.: Huff, H.R., Sirtl, E., The Electrochemical Society, Inc., Princeton, p. 626 Google Scholar
3. Wruck, D., Gaworzewski, P., phys.stat.sol.(a) 56, 557 (1979)CrossRefGoogle Scholar
4. Schaake, H.F., Barber, S.C., Pinizotto, R.F. in “Semiconductor Silicon 1981” Eds.: Huff, H.R., Kriegler, R.J., Takeishi, Y., The Electrochemical Society,Inc., Pennington, p. 273 Google Scholar
5. Kaiser, W., Keck, P.H., Lange, C.F., Phys.Rev. 101, 1264 (1956)CrossRefGoogle Scholar
6. Graff, K., Grallath, E., Ades, S., Goldbach, G., Toelg, G., Sol.State Electr. 16, 887 (1973)Google Scholar
7. Faulkner, R.A., Phys.Rev. 184, 713 (1969)Google Scholar
8. Ramdas, A.K., Rodriguez, S., Rep.Progr.Phys. 44, 1297 (1981) and references thereinGoogle Scholar
9. Krag, W.E., Zeiger, H.J., Phys.Rev.Letters 8, 485 (1962)Google Scholar
10. Swartz, C., Lemmon, D.H., Thomas, R.N., Sol.State Comm. 36, 331 (1980)CrossRefGoogle Scholar
11. Grimmeiss, H.G., Janzen, E., Ennen, H., Schirmer, O., Schneider, J., Woerner, R., Holm, C., Sirtl, E., Wagner, P., Phys.Rev. B24, 4571 (1981)Google Scholar
12. Fuller, C.S., Doleiden, F.H., Wolfstirn, K., J.Phys.Chem.Sol. 13, 187 (1960)Google Scholar