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Infrared Spectroscopy of Epitaxial Antimony Sulpho Iodide Thin Films

Published online by Cambridge University Press:  17 March 2011

S. Kotru ,
S. Surthi ,
R. K. Pandey  and
D. Donnelly
S. Kotru
Affiliation:
Department of Electrical and Computer Engineering The University of Alabama, Tuscaloosa, AL 35487-0286, U.S.A
S. Surthi
Affiliation:
Department of Electrical and Computer Engineering The University of Alabama, Tuscaloosa, AL 35487-0286, U.S.A
R. K. Pandey
Affiliation:
Department of Electrical and Computer Engineering The University of Alabama, Tuscaloosa, AL 35487-0286, U.S.A
D. Donnelly
Affiliation:
Department of Physics, Southwest Texas State University, San Marcos, TX
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Abstract

Thin films of antimony sulpho iodide (SbSI) were grown on platinized silicon substrates by the pulsed laser deposition method. As grown films were amorphous and annealing at 250 °C for 5 minutes introduced crystallinity in the films. Infrared reflectance measurements were done in the frequency range ∼ 500 – 5000 cm−1 (wavelength ∼ 2–20 μm). The reflectance measurements were taken at temperatures above and below the ferroelectric transition of SbSI ∼ 20° C. The index of refraction for a (121) oriented film was determined to be 2.83 ± 0.35 at a temperature of 25.6 °C, and 2.80 ± 0.35 at a temperature of 9.6 °C. For a (002) oriented film, the index was 3.82 ± 0.48 at a temperature of 26.5 °C, and 3.76 ± 0.48 at a temperature of 8.0 °C. Pyro-optic coefficients of 1.5 × 10−3 °C−1 for the (121) oriented film, and 3.2 × 10−3 °C−1 for the (002) oriented film were obtained. These results are consistent with measurements done in the visible region, and demonstrate the potential of SbSI as an infrared detector material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C7.14.1
Copyright
Copyright © Materials Research Society 2002

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