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Infrared ellipsometric characterization of silicon nitride films on textured Si photovoltaic cells
Published online by Cambridge University Press: 21 March 2011
Abstract
We present an infrared spectroscopic ellipsometry investigation of SixNy films deposited on textured Si substrates employed for photovoltaic cells. A multiple-sample data analysis scheme is used in order to determine the SixNy dielectric function and thickness parameters regardless of the surface morphology of the substrate. We observe changes in the dielectric function of the silicon nitride film which suggest variations in the chemical composition of the films depending on the substrate morphology.
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- Copyright © Materials Research Society 2009