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Influences of Polarization Effects in the Electrical Properties of Polycrystalline MgZnO/ZnO Heterostructure

Published online by Cambridge University Press:  31 January 2011

Huai-An Chin ,
Chih-I Huang ,
Yuh-Renn Wu ,
I-Chun Cheng ,
Jian Z. Chen ,
Kuo-Chuang Chiu  and
Tzer-Shen Lin
Huai-An Chin
Affiliation:
[email protected], National Taiwan University, Graduate Institute of Photonics and Optoelectronics, Taipei, Taiwan, Province of China
Chih-I Huang
Affiliation:
[email protected], National Taiwan University, Graduate Institute of Photonics and Optoelectronics, Taipei, Taiwan, Province of China
Yuh-Renn Wu
Affiliation:
[email protected], National Taiwan University, Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, Taipei, Taiwan, Province of China
I-Chun Cheng
Affiliation:
[email protected], National Taiwan University, Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, Taipei, Taiwan, Province of China
Jian Z. Chen
Affiliation:
[email protected], National Taiwan University, Institute of Applied Mechanics, No.1 Sec.4 Roosevelt Rd., Taipei, 10617, Taiwan, Province of China
Kuo-Chuang Chiu
Affiliation:
[email protected], Industrial Technology Research Institute, Materials Research Laboratories, Hsinchu, Taiwan, Province of China
Tzer-Shen Lin
Affiliation:
[email protected], Industrial Technology Research Institute, Materials Research Laboratories, Hsinchu, Taiwan, Province of China
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Abstract

ZnO has shown great promise for the application in optoelectronic devices. Since the modulation of conductivity is one of the key issues in device performances, we have applied the Monte Carlo method to analyze the mobility of poly-crystalline MgZnO/ZnO heterostructure thin film layer in this paper. The effects of the grain boundary scattering, ionized impurity scattering, as well as phonon scattering are considered. Our study shows that with a design of modulation doping by including the effects of spontaneous and piezoelectric polarization, the grain boundary potential can be suppressed to improve the mobility of the ZnO layer by order(s) of magnitude. Simulation results are also confirmed by our experimental works that polarization effects play an important role to attract carriers and to increase the mobility.

Keywords

grain boundariessimulationelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H04-05
Copyright
Copyright © Materials Research Society 2010

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