Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-29T09:37:34.215Z Has data issue: false hasContentIssue false
  • English
  • Français

The Influence of Tte Substrate Surface on the Nucleation and Growth of Superconducting Thin Films

Published online by Cambridge University Press:  28 February 2011

S. N. Basu ,
N. Bordes ,
A. Rollett ,
M. Cohen  and
M. Nastasi
S. N. Basu
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
N. Bordes
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
A. Rollett
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
M. Cohen
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
M. Nastasi
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
Get access

Abstract

The quality of epitaxially grown superconducting thin films is dependent on the nature of the substrate surface. In this study, the surface of <100> oriented SrTiO3 single crystals was modified by mechanical polishing, thermal annealing and chemical etching. A study of the YBa2Cu3O7-x thin films grown on these substrates showed that high quality superconducting films were obtained when the substrate surface was highly oriented in the <100> direction and was also microscopically smooth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 1157
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 LeGouse, F. K., Phil. Mag. B., 57 (2), 167 (1988)Google Scholar
2 Nastasi, M., Structure-Property Relationships in Surface-Modified Ceramics, edited by McHargue, C. J. et al. (Kluwer Academic Publishers, Dordrecht, 1989), p. 477 Google Scholar
3 Mankiewich, P. M., Schofield, J. H., Skocpol, W. J., Howard, R. E., Dayem, A. H. and Good, E., Appl. Phys. Lett., 51, 1753 (1987)Google Scholar
4 Chan, Siu-Wai, Bagley, B. G., Green, B. H., Giroud, M., Feldmann, W. L., Jenkin, K. R. and Wilkins, B. J., Appl. Phys. Lett., 53, 1443 (1988)Google Scholar
5 Kentgens, A. P. M., Carim, A. H. and Dam, B., J. of Crystal Growth, 91, 355 (1988)Google Scholar
6 Phillips, J. R., Mayer, J. W., Martin, J. A. and Nastasi, M., submitted to Appl. Phys. Lett.Google Scholar
7 Clemens, B. M., Nieh, C. W., Kittl, J. A., Johnson, W. L., Josefowicz, J. Y. and Hunter, A. T., ADDI. Phvs. Lett. 53, 1871 (1988)Google Scholar