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The Influence of Tte Substrate Surface on the Nucleation and Growth of Superconducting Thin Films

Published online by Cambridge University Press:  28 February 2011

S. N. Basu ,
N. Bordes ,
A. Rollett ,
M. Cohen  and
M. Nastasi
S. N. Basu
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
N. Bordes
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
A. Rollett
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
M. Cohen
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
M. Nastasi
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
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Abstract

The quality of epitaxially grown superconducting thin films is dependent on the nature of the substrate surface. In this study, the surface of <100> oriented SrTiO3 single crystals was modified by mechanical polishing, thermal annealing and chemical etching. A study of the YBa2Cu3O7-x thin films grown on these substrates showed that high quality superconducting films were obtained when the substrate surface was highly oriented in the <100> direction and was also microscopically smooth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 1157
Copyright
Copyright © Materials Research Society 1990

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References

1 LeGouse, F. K., Phil. Mag. B., 57 (2), 167 (1988)Google Scholar
2 Nastasi, M., Structure-Property Relationships in Surface-Modified Ceramics, edited by McHargue, C. J. et al. (Kluwer Academic Publishers, Dordrecht, 1989), p. 477 Google Scholar
3 Mankiewich, P. M., Schofield, J. H., Skocpol, W. J., Howard, R. E., Dayem, A. H. and Good, E., Appl. Phys. Lett., 51, 1753 (1987)Google Scholar
4 Chan, Siu-Wai, Bagley, B. G., Green, B. H., Giroud, M., Feldmann, W. L., Jenkin, K. R. and Wilkins, B. J., Appl. Phys. Lett., 53, 1443 (1988)Google Scholar
5 Kentgens, A. P. M., Carim, A. H. and Dam, B., J. of Crystal Growth, 91, 355 (1988)Google Scholar
6 Phillips, J. R., Mayer, J. W., Martin, J. A. and Nastasi, M., submitted to Appl. Phys. Lett.Google Scholar
7 Clemens, B. M., Nieh, C. W., Kittl, J. A., Johnson, W. L., Josefowicz, J. Y. and Hunter, A. T., ADDI. Phvs. Lett. 53, 1871 (1988)Google Scholar