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Influence of the photoinduced EL2 Grating on Electron and Hole Gratings Generated in GaAs

Published online by Cambridge University Press:  21 February 2011

Laurent Disdier  and
Gerald Roosen
Laurent Disdier
Affiliation:
Institut d'Optique Théorique et Appliquée, Unité de Recherche Associée au Centre National de la Recherche Scientifique n°14 Bâtiment 503, BP 147, 91403 Orsay Cedex, FRANCE
Gerald Roosen
Affiliation:
Institut d'Optique Théorique et Appliquée, Unité de Recherche Associée au Centre National de la Recherche Scientifique n°14 Bâtiment 503, BP 147, 91403 Orsay Cedex, FRANCE
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Abstract

Dynamic gratings of free carriers are generated from optical excitation of the deep EL2 level in semi insulating gallium arsenide with nanosecond pulses. The nonlinear modification of the crystal index of refraction is evidenced by degenerate four wave mixing experiments. In regards to the sample parameters, a fair agreement is obtained between the experimental values and the theoretical predictions derived from the Drude-Lorentz model and the anharmonic motion of carriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 183
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

(1) Martin, G.M.,Appl. Phys. Lett., 39, p 747 (1981).Google Scholar
(2) Fisher, R. A.,Optical phase conjugation Sec 10, Academic Press (1983.)Google Scholar
(3) Disdier, L. and Roosen, G., Optics Commun., 88,.p. 559 (1992).CrossRefGoogle Scholar
(4) Valley, G.C. and Smirl, A., IEEE J. Quantum Electron., OE 24, p 304 (1988).Google Scholar
(5) Wolff, P.A. and Pearson, G. A., Phys. Rev. Lett., 17, p 1015 (1966).Google Scholar
(6) Auyang, S. Y. and Wolff, P. A., J. Opt. Soc. Am. B, 6, p 595 (1988).Google Scholar
(7) Khan, M. A., Opt. Lett., 5, p 261 (1980).Google Scholar
(8) Wherrett, B.S., Proc. R. Soc. London A, 390, p373 (1983).Google Scholar
(9) Chen, Y. J. and Carter, G. M., Appl. Phys. Lett., 41, p 307 (1982).Google Scholar
(10) Disdier, L. and Roosen, G., Annales de Physique, 16, p. 119 (1991).Google Scholar
(11) Yariv, A., Quantum Electronics, Sec 14, (John Wiley and sons, New York 1975).Google Scholar
(12) Fabre, J.C., Jonathan, J.M.C. and Roosen, G., Opt. Commun., 65, p 257 (1988).Google Scholar
(13) Dobrila, P. and Blackemore, J.S., J. Appl. Phys., 58, p 203,(1985).Google Scholar
(14) Delaye, Ph., Halter, P.U. and Roosen, G., J. Opt. Soc. Am. B., 1, p 2268 (1990).Google Scholar