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Influence of the Decoration by Dislocations on Grain Boundary Passivation by Hydrogen in Silicon

Published online by Cambridge University Press:  22 February 2011

L. Ammor ,
G. Mathian  and
S. Martinuzzi
L. Ammor
Affiliation:
Laboratoire de Photoélectricité des Semi-conducteurs, Facultc des Sciences et Techniques de Saint-Jéresearch-articleÔme, Université d'Aix- Marseille III, F-13397 Marseille Cedex 13
G. Mathian
Affiliation:
Laboratoire de Photoélectricité des Semi-conducteurs, Facultc des Sciences et Techniques de Saint-Jéresearch-articleÔme, Université d'Aix- Marseille III, F-13397 Marseille Cedex 13
S. Martinuzzi
Affiliation:
Laboratoire de Photoélectricité des Semi-conducteurs, Facultc des Sciences et Techniques de Saint-Jéresearch-articleÔme, Université d'Aix- Marseille III, F-13397 Marseille Cedex 13
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Abstract

In large grained polycrystalline silicon, the recombination activity of G.B.'s and their passivation by hydrogen is found to be dependent on the decoration by dislocations. Dislocations appear to be preferential paths for in-diffusion, at a depth of a few hundreds of pim's. Similar enhancements of diffusion and passivation exist in grains around dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 95
Copyright
Copyright © Materials Research Society 1988

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References

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