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Influence of Structure on the Formation of Dislocation in LBO Crystal

Published online by Cambridge University Press:  10 February 2011

X. B. Hu ,
S. S. Jiang ,
X. R. Huang ,
W. Zeng ,
W. J. Liu ,
Y. D. Zheng ,
Q. L. Zhao  and
C. T. Chen
X. B. Hu
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
S. S. Jiang
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
X. R. Huang
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
W. Zeng
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
W. J. Liu
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
Y. D. Zheng
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
Q. L. Zhao
Affiliation:
Fujian Institute of Research on the Structure of Matter, Academia Sinica, Fuzhou 350002, P. R. China
C. T. Chen
Affiliation:
Fujian Institute of Research on the Structure of Matter, Academia Sinica, Fuzhou 350002, P. R. China
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Abstract

Dislocations in LiB3O5(LBO) single crystal were investigated by white-beam synchrotron radiation topography(WBSRT). The WBSRT revealed that the grown-in dislocations are mainly pure screw or edge types with the Burgers vectors in the low index directions on (010) lattice plane. Based on the structure analysis, the formation cause of dislocations can be interpreted in terms of the loose packing of B-O rings and the low density of Li+ on (010) lattice plane.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 375
Copyright
Copyright © Materials Research Society 1996

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