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Influence of Structural and Electrical Characteristics of Extended Defects on GaAs Field Effect Transistors

Published online by Cambridge University Press:  26 February 2011

M. Van Hove ,
W. De Raedt ,
M. De Potter ,
M. Van Rossum  and
J. L. Weyher
M. Van Hove
Affiliation:
IMEC v.z.w., Kapeldreef 75, 3030 Leuven, Belgium
W. De Raedt
Affiliation:
IMEC v.z.w., Kapeldreef 75, 3030 Leuven, Belgium
M. De Potter
Affiliation:
IMEC v.z.w., Kapeldreef 75, 3030 Leuven, Belgium
M. Van Rossum
Affiliation:
IMEC v.z.w., Kapeldreef 75, 3030 Leuven, Belgium
J. L. Weyher
Affiliation:
Catholic University, Faculty of Science, Solid State Physics III Toemooiveld, 6525 ED Nijmegen, The Netherlands
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Abstract

The paper presents a systematic study of grown-in and process-induced defects on LEC GaAs substrates. Defects have been revealed by photoetching the wafers with diluted Sirti-like solutions after various processing steps. MESFET arrays have been processed on the wafers and a systematic mapping of the I-V characteristics has been performed. A correlation between various defect configurations and the FET threshold voltage shifts has been established.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 457
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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