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Influence of Stoichiometric Variations and Rapid Thermal Processing of β-FESI2 thin Films on their Electrical and Microstructural Properties

Published online by Cambridge University Press:  15 February 2011

M. Döscher ,
B. Selle ,
M. Pauli ,
F. Kothe ,
J. Szymanski ,
J. Müller  and
H. Lange
M. Döscher
Affiliation:
Technical University Hamburg-Harburg, Eissendorfer Str. 42, 21073 Hamburg, Germany
B. Selle
Affiliation:
Hahn-Meitner-Institut Berlin GmbH, Rudower Chaussee 5, 12489 Berlin, Germany
M. Pauli
Affiliation:
Technical University Hamburg-Harburg, Eissendorfer Str. 42, 21073 Hamburg, Germany
F. Kothe
Affiliation:
Technical University Hamburg-Harburg, Eissendorfer Str. 42, 21073 Hamburg, Germany
J. Szymanski
Affiliation:
Technical University Hamburg-Harburg, Eissendorfer Str. 42, 21073 Hamburg, Germany
J. Müller
Affiliation:
Technical University Hamburg-Harburg, Eissendorfer Str. 42, 21073 Hamburg, Germany
H. Lange
Affiliation:
Hahn-Meitner-Institut Berlin GmbH, Rudower Chaussee 5, 12489 Berlin, Germany
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Abstract

Amorphous irondisilicide thin films were deposited on silicon substrates in a RF sputtering process, followed by rapid thermal crystallization by means of moving the thin film beneath a line-shaped electron beam to form β-FeSi2. Depending on the deposition process parameters, films of a different stoichiometry can be produced. The deviations from the 1:2 stoichiometry, which have been determined by Rutherford Backscattering (RBS), are related to changes in the microstructure (studied by microscopic methods like TEM and AFM), the infrared phonon spectra (measured by FTIR spectroscopy) and the electrical properties of the crystallized films. The microstructure of the iron disilicide thin films is improved when the composition significantly deviates from 2.0, probably due to silicon interstitials in the silicide thin film. Films of different stoichiometry result in p- or n-type thin films with carrier densities below 5×1018cm−3 and hall mobilities up to 180cm 2/Vs. First results show that not only β-FeSi2-siliconheterojunctions as reported before but also pn-β-FeSi2-homojunctions show rectifying behavior. Rapid thermal processing with the line electron beam leads to a further improvement of the film quality when the scan velocity is increased up to the order of several cm/s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 325
Copyright
Copyright © Materials Research Society 1996

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