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Influence of Oxygen Vacancies and Strain on Electronic Reliability of SiO2-x Films

Published online by Cambridge University Press:  01 February 2011

Ken Suzuki ,
Yuta Ito ,
Hideo Miura  and
Tetsuo Shoji
Ken Suzuki
Affiliation:
Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku University Aramaki Aoba 6-6-11, Aoba-ku, Sendai 980-8579, Japan
Yuta Ito
Affiliation:
Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku University Aramaki Aoba 6-6-11, Aoba-ku, Sendai 980-8579, Japan
Hideo Miura
Affiliation:
Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku University Aramaki Aoba 6-6-11, Aoba-ku, Sendai 980-8579, Japan
Tetsuo Shoji
Affiliation:
Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku University Aramaki Aoba 6-6-11, Aoba-ku, Sendai 980-8579, Japan
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Abstract

We performed a quantum chemical molecular dynamics analysis for SiO2-x structure under strain to make clear the effect of the strain and intrinsic defects on both electronic and structural characteristics of SiO2-x. The SiO2-x showed a large change of the structure during the simulation. This is mainly because that the Si-O bonds near an oxygen vacancy were broken and a free silicon monoxide molecule was generated in the SiO2-x structure. The magnitude of the band gap of the SiO2-x decreased drastically due to the formation of the free monoxide. In addition, the band gap decreased further under large tensile strain of about 10%. We can conclude therefore, that both the existence of oxygen vacancies and tensile strain in SiO2-x films deteriorate the electronic reliability of the oxide film seriously.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.19
Copyright
Copyright © Materials Research Society 2005

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References

1 Maserjian, J. and Zamani, N., J. Vac. Sci. Technol. 20, 743 (1982).Google Scholar
1 Olivo, P., Nguyen, T., and Ricco, B., IEEE Trans. Electron Devices, ED-35, 2259 (1988).Google Scholar
3 Miura, H. and Ikeda, S., IEICE Trans. on Electronics, E82-C, No. 6, 830 (1999).Google Scholar
4 Moriya, H., Iwasaki, T., and Miura, H., Ext. Abs. of the 2002 Int. Conf. on Solid State Devices and Materials, 186 (2002).Google Scholar
5 Yamada, A., Endou, A., Takabe, H., Teraishi, K., Ammal, S. S. C., Kubo, M., Nakamura, K. G., Kitajima, M., and Miyamoto, A., Jpn, J. Appl. Phys. 38, 2434 (1999).Google Scholar
6 Suzuki, K., Kuroiwa, Y., Takami, S., Kubo, M., Miyamoto, A., and Imamura, A., Solid State Ionics, 152-153, 273 (2002).Google Scholar
7 Elanany, M., Selvam, P., Yokosuka, T., Takami, S., Kubo, M., Imamura, A., and Miyamoto, A., J. Phys. Chem. B, 107, 1518 (2003).Google Scholar
8 Suzuki, K., Takeda, Y., Lu, Z., and Shoji, T., Proceeding of International Congress on Advances in Nuclear Power Plants, CD-ROM, Paper No. 4227 (2004).Google Scholar
9 Verlet, L., Phys. Rev. 159, 98–103 (1967).Google Scholar
10 Ewald, P. P., Ann. Phys. 64, 253 (1921).Google Scholar
11 Miura, R., Yamano, H., Yamauchi, R., Katagiri, M., Kubo, M., Vetrivel, R., and Miyamoto, A., Catalysis Today, 23, 409 (1995).Google Scholar