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The Influence of Oxygen Content On Photoluminescence from Er-Doped SiOx
Published online by Cambridge University Press: 10 February 2011
Abstract
SiOx films with oxygen concentrations ranging 13–46 at.% were deposited by plasma enhanced chemical vapor deposition (PECVD) technique using pure SiH4 and N2O mixture. Erbium was then implanted at an energy of 500 KeV with dose of 2×1015 ions/cm2. The samples were subsequently annealed in N2 for 20 sec at temperatures of (300–950°C). Room temperature (RT) photo-luminescence (PL) data were collected by Fourier Transform Infrared Spectroscopy (FTIS) with an argon laser at a wavelength of 514.5 nm and an output power from 5 to 2500 mw. The intense room-temperature luminescence was observed around 1.54 μm. The luminescence intensity increases by 2 orders of magnitude as compared with that of Er-doped Czochralski (CZ) Si. We found that the Er.- luminescence depends strongly on the SiOx microstructure. Our experiment also showed that the silicon grain radius decreased with increasing oxygen content and finally formed micro-crystalline silicon or nano-crystalline silicon. As a result, these silicon small particles could facilitate the energy transfer to Er3+ and thus enhanced the photoluminescence intensity.
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- Copyright © Materials Research Society 1999
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